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    Toshiba America Electronic Components HN2C01FEYTE85LF

    TRANS 2NPN 50V 0.15A ES6
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    DigiKey HN2C01FEYTE85LF Digi-Reel 2,640 1
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    HN2C01FEYTE85LF Cut Tape 2,640 1
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    Toshiba America Electronic Components HN2C01FU-Y(TE85L,F

    TRANS 2NPN 50V 0.15A US6
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    HN2C01FU-Y(TE85L,F Reel 3,000
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    Mouser Electronics HN2C01FU-Y(TE85L,F
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    Toshiba America Electronic Components HN2C01FE-GR(T5L,F)

    TRANS 2NPN 50V 0.15A ES6
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    Quest Components HN2C01FE-GR(T5L,F) 1,561
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    Toshiba America Electronic Components HN2C01FU-GR(T5L,F)

    TRANS 2NPN 50V 0.15A US6
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    Toshiba America Electronic Components HN2C01FU-GR

    150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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    Quest Components HN2C01FU-GR 3,000
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    HN2C01 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2C01FE Toshiba Original PDF
    HN2C01FE-GR(T5L,F) Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6 Original PDF
    HN2C01FE-GRT5LF Toshiba HN2C01FE - Trans GP BJT NPN 50V 0.15A 6-Pin ES T/R Original PDF
    HN2C01FEYTE85LF Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS NPN DUAL 50V 100MA ES6 Original PDF
    HN2C01FU Toshiba dual NPN transistor Original PDF
    HN2C01FU Toshiba Japanese - Transistors Original PDF
    HN2C01FU Toshiba NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
    HN2C01FU-GR(T5L,F) Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A US6 Original PDF
    HN2C01FU-Y(TE85L,F Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A US6 Original PDF

    HN2C01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity


    Original
    PDF HN2C01FE 150mA

    HN2C01FE

    Abstract: No abstract text available
    Text: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) : hFE = 120~400 High hFE Excellent hFE linearity


    Original
    PDF HN2C01FE 150mA HN2C01FE

    HN2C01FE

    Abstract: No abstract text available
    Text: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity


    Original
    PDF HN2C01FE 150mA HN2C01FE

    Untitled

    Abstract: No abstract text available
    Text: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE z Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.)


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    PDF HN2C01FE 150mA

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm l Small package (dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400


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    PDF HN2C01FU 150mA HN2C01FU

    HN2C01FE

    Abstract: No abstract text available
    Text: HN2C01FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 HN2C01FE ○ 低周波増幅用 ○ AM 増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。


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    PDF HN2C01FE 150mA 100mA, HN2C01FE

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN2C01FU ○ 低周波増幅用 ○ AM 増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 高耐圧です。


    Original
    PDF HN2C01FU 150mA 100mA, HN2C01FU

    Untitled

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400


    Original
    PDF HN2C01FU 150mA

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original
    PDF HN2C01FU 150mA HN2C01FU

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original
    PDF HN2C01FU 150mA HN2C01FU

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400


    Original
    PDF HN2C01FU 150mA HN2C01FU

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2C01 FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN2C01FU Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 • Small Package (Dual Type) • High Voltage and High Current : VcEO = 50V, Ic = 150mA (MAX.)


    OCR Scan
    PDF HN2C01 HN2C01FU 150mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE HN2C01FU AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : VcEO = 50V, Ic = 150mA (MAX.) • High hpE : hp-j; = 120~400 • Excellent hpE Linearity : hpE ( I c = 0.1mA)/hpE (Ic = 2mA) = 0,95 (Typ.)


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    PDF HN2C01FU 150mA 100mA,

    BD123

    Abstract: HN2C01FU
    Text: TO SHIBA HN2C01FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN2C01FU Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 .1 ± 0.1 • Small Package (Dual Type) • High Voltage and High Current : VCEO —50V, I q = 150mA (MAX.)


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    PDF HN2C01FU 150mA 961001EAA2' BD123 HN2C01FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2C01 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 7 f m • ■ F 11 m Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1 +0.1 • Small Package (Dual Type) • High Voltage and High Current : VCE0 = 50V, IC = 150mA (MAX.)


    OCR Scan
    PDF HN2C01 150mA 961001EAA2'

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737