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    NXP Semiconductors TDA1519CTH-N3C,118

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    HN3C11 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C11F Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C11F Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    HN3C11FU Unknown dual NPN transistor Scan PDF
    HN3C11FU Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    HN3C11FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF

    HN3C11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original
    04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A PDF

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    HN3C11F PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    HN3C11F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3r 11F • ■ 'm ■ m tr ■ ■ ■ V H F - U H F B A N D LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)


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    HN3C11F PDF

    Silicon NPN Epitaxial Planar Type

    Abstract: WM 6
    Text: HN3C11 FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 1 FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US 6 Ultra Super Mini Type with Leads 2-1 + 0.1 6 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    HN3C11 Silicon NPN Epitaxial Planar Type WM 6 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE H N 3 C 1 1 FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)


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    HN3C11 N3C11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3ri1Fll • ■ u 'm mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    HN3C11FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN3C11 FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 1 FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US 6 Ultra Super Mini Type with Leads 2-1 + 0.1 6 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    HN3C11 PDF

    HN3C11F

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    HN3C11F N3C11F HN3C11F PDF

    HN3C11F

    Abstract: N3C11
    Text: TOSHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS + 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    HN3C11F N3C11F HN3C11F N3C11 PDF