HN3C16 Search Results

HN3C16 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN3C16F		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C16F		Toshiba	RF 2-in-1 Hybrid Transistors		Scan	PDF
HN3C16FT		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C16FT		Toshiba	Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications		Scan	PDF
HN3C16FU		Unknown	NPN Transistor		Scan	PDF
HN3C16FU		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C16FU		Toshiba	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)		Scan	PDF

HN3C16 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066	PDF
HN3C16F Abstract: No abstract text available Text: HN3C16F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE H N3C 16 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	HN3C16F HN3C16F	PDF
HN3C16FU Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN3C16FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	HN3C16FU HN3C16FU	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C16F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS h 0.2 2.8 -0.3 Including Two Devices in SM6 Super Mini Type with 6 Leads I-0.2 - MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	HN3C16F	PDF
HN3C16 Abstract: No abstract text available Text: TOSHIBA HN3C16FT TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0 .1 • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6	OCR Scan	HN3C16FT 2SC5261 2000MHz S21el2 HN3C16	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE HN3C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N î f 1 f i FT • ■ u m MF ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super	OCR Scan	HN3C16FT 2SC5261 2000MHz	PDF
2SC5261 Abstract: HN3C16FT Text: T O S H IB A HN3C16FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C16FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6	OCR Scan	HN3C16FT 2SC5261 2000MHz 2SC5261 HN3C16FT	PDF
HN3C16FU Abstract: No abstract text available Text: T O S H IB A TENTATIVE HN3C16FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C16FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	HN3C16FU HN3C16FU	PDF
HN3C16FU Abstract: No abstract text available Text: TO SH IBA HN3C16FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 i 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	HN3C16FU N3C16 HN3C16FU	PDF
HN3C16 Abstract: No abstract text available Text: HN3C16FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC	OCR Scan	HN3C16FU HN3C16	PDF
Untitled Abstract: No abstract text available Text: HN3C16FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • U nit in mm 2-1 + 0.1 Including Two Devices in US6 U ltra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	HN3C16FU	PDF
TOSHIBA FL Abstract: No abstract text available Text: TOSHIBA HN3C16FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	HN3C16FU TOSHIBA FL	PDF
2SC5261 Abstract: HN3C16FT Text: TO SH IBA TENTATIVE HN3C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 1.25 ± 0.1	OCR Scan	HN3C16FT 2SC5261 2SC5261 HN3C16FT	PDF