HN3C16FU
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C16FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C16FU
HN3C16FU
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HN3C16FU
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE HN3C16FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C16FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)
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HN3C16FU
HN3C16FU
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HN3C16FU
Abstract: No abstract text available
Text: TO SH IBA HN3C16FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 i 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN3C16FU
N3C16
HN3C16FU
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HN3C16
Abstract: No abstract text available
Text: HN3C16FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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HN3C16FU
HN3C16
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Untitled
Abstract: No abstract text available
Text: HN3C16FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • U nit in mm 2-1 + 0.1 Including Two Devices in US6 U ltra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN3C16FU
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TOSHIBA FL
Abstract: No abstract text available
Text: TOSHIBA HN3C16FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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HN3C16FU
TOSHIBA FL
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