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    HUF75639S3ST Price and Stock

    onsemi HUF75639S3ST

    MOSFET N-CH 100V 56A D2PAK
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    DigiKey HUF75639S3ST Cut Tape 735 1
    • 1 $3.34
    • 10 $2.181
    • 100 $3.34
    • 1000 $3.34
    • 10000 $3.34
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    HUF75639S3ST Digi-Reel 735 1
    • 1 $3.34
    • 10 $2.181
    • 100 $3.34
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    HUF75639S3ST Reel 800
    • 1 -
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    • 1000 $1.17374
    • 10000 $1.10675
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    Arrow Electronics HUF75639S3ST 800 16 Weeks 800
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    • 1000 $1.202
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    HUF75639S3ST 700 1
    • 1 $1.3083
    • 10 $1.1855
    • 100 $1.0202
    • 1000 $0.9509
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    Verical HUF75639S3ST 810 259
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    Avnet Americas HUF75639S3ST Reel 1,600 16 Weeks 800
    • 1 -
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    • 10000 $1.04165
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    Newark HUF75639S3ST Cut Tape 486 1
    • 1 $4.13
    • 10 $3.49
    • 100 $2.53
    • 1000 $2.17
    • 10000 $1.99
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    HUF75639S3ST Reel 800
    • 1 $2.08
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    • 100 $2.08
    • 1000 $2.08
    • 10000 $1.85
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    Mouser Electronics HUF75639S3ST 4,678
    • 1 $2.7
    • 10 $1.9
    • 100 $1.38
    • 1000 $1.27
    • 10000 $1.27
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    Future Electronics HUF75639S3ST Reel 800 22 Weeks 800
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    HUF75639S3ST Reel 6 Weeks 1,600
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    • 10000 $0.925
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    Onlinecomponents.com HUF75639S3ST
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    • 10000 $1.08
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    Rochester Electronics HUF75639S3ST 810 1
    • 1 $1.23
    • 10 $1.23
    • 100 $1.16
    • 1000 $1.05
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    TME HUF75639S3ST 1
    • 1 $2.41
    • 10 $2.09
    • 100 $1.46
    • 1000 $1.39
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    ComSIT Distribution HUF75639S3ST 436
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    Richardson RFPD HUF75639S3ST 800
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    Avnet Silica HUF75639S3ST 17 Weeks 800
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    EBV Elektronik HUF75639S3ST 18 Weeks 800
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    Flip Electronics HUF75639S3ST 1,600
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    New Advantage Corporation HUF75639S3ST 11,200 1
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    • 10000 $1.42
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    Rochester Electronics LLC HUF75639S3ST

    POWER FIELD-EFFECT TRANSISTOR, 5
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    DigiKey HUF75639S3ST Bulk 235
    • 1 -
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    • 1000 $1.28
    • 10000 $1.28
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    Rochester Electronics LLC HUF75639S3ST_Q

    MOSFET N-CH 100V 56A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75639S3ST_Q Bulk 256
    • 1 -
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    • 1000 $1.18
    • 10000 $1.18
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    Aptina Imaging HUF75639S3ST

    Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical HUF75639S3ST 800 800
    • 1 -
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    • 1000 $1.2035
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    Fairchild Semiconductor Corporation HUF75639S3ST

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    Bristol Electronics HUF75639S3ST 1,600
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    Quest Components HUF75639S3ST 1,280
    • 1 $1.85
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    • 100 $1.85
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    Rochester Electronics HUF75639S3ST 110,726 1
    • 1 $1.23
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    • 100 $1.16
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    Find more HUF75639S3ST price and stock on Findchips.com

    HUF75639S3ST Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75639S3ST Fairchild Semiconductor 56 A, 100 V, 0.025 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75639S3ST Intersil MOSFET, Enhancement, N Channel, 100V, TO-263, 3-Pin Original PDF
    HUF75639S3ST_NL Fairchild Semiconductor 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75639S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 HUF75639S3 PDF

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 PDF

    75639p

    Abstract: 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639p 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST PDF

    75639s

    Abstract: 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 39G UF75 9P3, UF75 9S3 bt A, 0V, 25 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 O-263AB TB334, 75639s 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST PDF

    75639p

    Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S 75639p 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST PDF

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75639P

    Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S O-263AB 330mm 100mm EIA-481 75639P HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334 PDF

    75639s

    Abstract: 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639s 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334 PDF

    PCF75652W

    Abstract: RFD14N05LSM9A FAIRCHILD SMD MARKING Fairchild wafer fab pcf7 100C AECQ101 HUF75652G3 JESD22-A102 HUF766
    Text: Date Created: 12/8/2003 Date Issued: 1/26/2004 PCN # 20034903 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		HUF75545P3 HUF75545S3ST HUF75631SK8T HUF75639S3 HUF75645P3 HUF75652G3 HUF76419D3ST HUF76419S3ST HUF76429S3ST HUFA76429D3 PCF75652W RFD14N05LSM9A FAIRCHILD SMD MARKING Fairchild wafer fab pcf7 100C AECQ101 HUF75652G3 JESD22-A102 HUF766 PDF

    75639s

    Abstract: 75639p
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 TM Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639s 75639p PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3S 54e-2 98e-1 99e-1 97e-2 HUF75639 95e-3 95e-2 PDF

    75639p

    Abstract: 75639s 75639G HUF75639P3 HUF75639S3ST TA75639
    Text: in te r« ! HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet O ctober 1999 S6A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs 4477.7 Features • 56A, 100 V These N-Channel power M O SFETs UWaBfr Fite N u m b e r are manufactured using the • Simulation Models


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3S AN7254 AN7260. 75639p 75639s 75639G HUF75639P3 HUF75639S3ST TA75639 PDF

    75639p

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.3 Features 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S 1-800-4-HARR 75639p PDF

    75639p

    Abstract: 30E2 75639g
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor January 1999 53A, 100 V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.4 Features • 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3S HUF75639 500e-2 35e-1 88e-3 18e-2 75639p 30E2 75639g PDF