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    Untitled

    Abstract: No abstract text available
    Text: HY51V17804B,HY51V16804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY51V17804B HY51V16804B PDF

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


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    HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414 PDF

    s18r

    Abstract: HY51V17804B
    Text: “HYUNDAI HY51V17804B, HY51V16804B 2M x 8-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells


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    HY51V17804B, HY51V16804B HY51V17804BJ HY51V17804BSLJ HY51V17804BT HY51V17804BSLT HY51V16804BJ HY51V16804BSLJ HY51V16804BT HY51V16804BSLT s18r HY51V17804B PDF

    Untitled

    Abstract: No abstract text available
    Text: - H Y U H D f t l * HY51V17804B.HY51V16804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY51V17804B HY51V16804B 15-tcwo A0-A11) PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 8 0 4 B ,H Y 5 1 V 1 6 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF

    Untitled

    Abstract: No abstract text available
    Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16


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    32814A 32810A 536A804AM HYM536A814AM 36810A HY5117404AJ/AT HY5117400AJ/AT HY5116404AJ HY5117404AJ PDF

    HY5118164BJC

    Abstract: HYM5V72A404 HY514404BJ HY5117404A
    Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR


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    HYM564124AR/ATR HYM572A124AR/ATR HYM564224AR/ATR HYM564214AF/ATF HY5118164BJC/BTC HY514404BJ/BT HY5117804BJ/BT HY5118164BJC HYM5V72A404 HY514404BJ HY5117404A PDF