Untitled
Abstract: No abstract text available
Text: HY51V18165B Series •HYUNDAI 1M X 16-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V18165B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V118165B utilized Hyundai's C M O S silicon gate process technology as well as advenced circuit techniques
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OCR Scan
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HY51V18165B
16-bit
16-bit.
HY51V118165B
1AD63-00-MAY95
HY51V18165BJC
HY51V18165BTC
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V18165B Series 1M X 16-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V18165B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V118165B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques
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OCR Scan
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HY51V18165B
16-bit
16-bit.
HY51V118165B
1AD63-00-MAY95
HY51V18165BJC
HY51V18165BTC
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PDF
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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OCR Scan
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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PDF
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