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    12H-0EH

    Abstract: HYM71V65M1601
    Text: 16Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M1601 PRELIMINARY Rev 0.1 The HYM71V65M1601 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag


    Original     		16Mx64 PC/100 8Mx16 HYM71V65M1601 HYM71V65M1601 54-pin 144-pin 12H-0EH PDF

    HY57V1291620

    Abstract: No abstract text available
    Text: 8Mx64 bit SDRAM SO DIMM X-Series based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M801 PRELIMINARY DESCRIPTION The HYM71V64M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag


    Original     		8Mx64 8Mx16 HYM71V64M801 HYM71V64M801 54-pin 144-pin HY57V1291620 PDF

    HY57V1291620

    Abstract: hy57v1291620ltc
    Text: HY57V1291620 4Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hyundai HY57V1291620 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1291620 is organized as 4banks of


    Original     		HY57V1291620 16bits HY57V1291620 728bit 152x16. 400mil 54pin hy57v1291620ltc PDF

    hym71v65801

    Abstract: HYM71V65801TX HY57V1291620
    Text: 8Mx64 bit SDRAM Unbuffered DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V65801 PRELIMINARY DESCRIPTION The HYM71V65801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four


    Original     		8Mx64 PC/100 8Mx16 HYM71V65801 HYM71V65801 54-pin 168-pin HYM71V65801TX HY57V1291620 PDF

    HYM71V65M1601

    Abstract: No abstract text available
    Text: 16Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M1601 PRELIMINARY DESCRIPTION The HYM71V65M1601 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig


    Original     		16Mx64 PC/100 8Mx16 HYM71V65M1601 HYM71V65M1601 54-pin 144-pin PDF

    HYM71V65M801LTX-10S

    Abstract: HYM71V65M801 SO DIMM 144
    Text: 8Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M801 PPRELIMINARY DESCRIPTION The HYM71V65M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag


    Original     		8Mx64 PC/100 8Mx16 HYM71V65M801 HYM71V65M801 54-pin 144-pin HYM71V65M801LTX-10S SO DIMM 144 PDF

    HYM71V65M1201

    Abstract: HY57V651620BTC-8
    Text: 12Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 & 4Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M1201 DESCRIPTION The HYM71V65M1201 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit and four 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a


    Original     		12Mx64 PC/100 8Mx16 4Mx16 HYM71V65M1201 HYM71V65M1201 8Mx16 54-pin 144-pin HY57V651620BTC-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bit SDRAM SO DIMM X-Series based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M801 PRELIMINARY Rev 0.3 The HYM71V64M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag


    Original     		8Mx64 8Mx16 HYM71V64M801 HYM71V64M801 54-pin 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1291620 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1291620 is organized as 4banks of


    Original     		HY57V1291620 16Bit HY57V1291620 728bit 152x16. 400mil 54pin PDF

    hy57v1291620

    Abstract: No abstract text available
    Text: HY57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1291620 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1291620 is organized as 4banks of


    Original     		HY57V1291620 16Bit HY57V1291620 728bit 152x16. 400mil 54pin PDF

    HY57V1291620

    Abstract: No abstract text available
    Text: » « Y U N P f t l - • HY57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V1291620 is a 134, 217 ,728bit C M O S Synchronous D RAM , ideally suited for the m ain m em ory a pplications w hich require large m em ory d en sity and high bandw idth. H Y 57V 1291620 is organized as 4banks of


    OCR Scan     		HY57V1291620 16Bit 57V1291620 728bit 152x16. HY57V1291620 PDF