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    Untitled

    Abstract: No abstract text available
    Text: HY57V281620HD L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HD(L)T is organized as 4banks of 2,097,152x16


    Original     		HY57V281620HD 16bits 728bit 152x16 400mil 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V281620HD L T 8Mx16-bit, 4KRef, 4Banks., 3.3V DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CM OS Synchronous DRAM, ideally suited fo r the main m em ory applications which require large m em ory density and high bandwidth. HY57V 281620HD(L)T is organized as 4banks o f 2,097,152x16


    OCR Scan     		HY57V281620HD 8Mx16-bit, 728bit HY57V 281620HD 152x16 PDF

    PC100

    Abstract: 16MX64 16MX8 8MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V


    OCR Scan     		HY57V28420A HY57V28820A HY57V281620A HY57V28420HC HY57V28820HC HY57V281620HC HY57V28420HD HY57V28820HD PC100 16MX64 16MX8 8MX16 PDF