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    SK Hynix Inc HY57V28820AT-P

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    HY57V28820A Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V28820ALT-6 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-8 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-H Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-K Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-P Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-S Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-6 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-8 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-H Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-I Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-K Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-P Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-S Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF

    HY57V28820A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4Mx8

    Abstract: HY57V28820AT-H
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin 4Mx8 HY57V28820AT-H

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin

    HY57V28820ALT-6

    Abstract: HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S
    Text: HY57V28820A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.


    Original     		PDF HY57V28820A 120mA 110mA 100mA. 240mA 220mA. 100mA HY57V28820A HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S

    HY57V28820HCT-H

    Abstract: hynix HY57V28820HCT-H truth table for 1 to 4 decoder
    Text: HY57V28820A 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.1/Apr. 01 1 HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory


    Original     		PDF HY57V28820A HY57V28820HC 728bit 304x8. 400mil 54pin HY57V28820HCT-H hynix HY57V28820HCT-H truth table for 1 to 4 decoder

    HY57V28820AT-H

    Abstract: HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin HY57V28820AT-H HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin

    HY57V28820AT-H

    Abstract: HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin HY57V28820AT-H HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v

    PC100

    Abstract: 16MX64 16MX8 8MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V


    OCR Scan     		PDF HY57V28420A HY57V28820A HY57V281620A HY57V28420HC HY57V28820HC HY57V281620HC HY57V28420HD HY57V28820HD PC100 16MX64 16MX8 8MX16

    HY57V28820ALT-6

    Abstract: No abstract text available
    Text: HY57V28820A L T 16MxS-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    OCR Scan     		PDF HY57V28820A 16MxS-bit, 728bit 304x8. 128M-bit 16Mx8-bit, HY57V28820ALT-6

    UT20001

    Abstract: No abstract text available
    Text: HY57V28820A L T-I 16Mx8-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION T h e H y n i x H Y 5 7 V 2 8 8 2 0 A is a 1 34, 2 1 7 , 7 2 8 bit C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s which require low power cons um pt ion


    OCR Scan     		PDF HY57V28820A 16Mx8-bit, 304x8. 400mil 54pin 128M-bit UT20001

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201

    PC100

    Abstract: 54-PIN
    Text: 2 . PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X XX X X PRO DUCT Q UICK REFERENCE New SDRAM PART NUMBERING XX I : Industrial Tem perature E: Extended Tem perature HY NIX M EM OR Y SPEED PRODUCT G ROUP 57 : SDRAM s PROCESS & PO W ER SUPPLY


    OCR Scan     		PDF 183MHz PC133 125MHz PC100, 100MHz M72V32656T8 HYM72V32636T8 HYM72V32756T8 PC100 54-PIN