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    HY57V28820AT Price and Stock

    SK Hynix Inc HY57V28820AT-P

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    HY57V28820AT Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V28820AT-6 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-8 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-H Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-I Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-K Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-P Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-S Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF

    HY57V28820AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4Mx8

    Abstract: HY57V28820AT-H
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin 4Mx8 HY57V28820AT-H

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin

    HY57V28820ALT-6

    Abstract: HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S
    Text: HY57V28820A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.


    Original     		PDF HY57V28820A 120mA 110mA 100mA. 240mA 220mA. 100mA HY57V28820A HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S

    HY57V28820AT-H

    Abstract: HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin HY57V28820AT-H HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin

    HY57V28820AT-H

    Abstract: HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin HY57V28820AT-H HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S

    HY57V28820ALT-6

    Abstract: No abstract text available
    Text: HY57V28820A L T 16MxS-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    OCR Scan     		PDF HY57V28820A 16MxS-bit, 728bit 304x8. 128M-bit 16Mx8-bit, HY57V28820ALT-6

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201

    UT20001

    Abstract: No abstract text available
    Text: HY57V28820A L T-I 16Mx8-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION T h e H y n i x H Y 5 7 V 2 8 8 2 0 A is a 1 34, 2 1 7 , 7 2 8 bit C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s which require low power cons um pt ion


    OCR Scan     		PDF HY57V28820A 16Mx8-bit, 304x8. 400mil 54pin 128M-bit UT20001