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    HY62SF16201A Search Results

    HY62SF16201A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY62SF16201A Hynix Semiconductor Super Low Power Slow SRAM - 2Mb Original PDF
    HY62SF16201A-I Hynix Semiconductor Original PDF
    HY62SF16201ALLF Hynix Semiconductor Original PDF
    HY62SF16201ALLF-I Hynix Semiconductor Original PDF

    HY62SF16201A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY62SF16201A

    Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
    Text: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The


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    HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A 128Kx16bit HY62UF16201A HY62QF16201A HY62EF16201A 16bits. HY62SF16201A-I HY62UF16201A-I PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


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    HY62SF16201A 128Kx16bit HY62SF16201A 16bit. HY62SY62SF16201A HYSF621Ac 100ns 120ns PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low


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    HY62SF16201A 128Kx16bit 16bit. HY62SF16201A-I 48ball 5M-1994. PDF

    HY62SF16201A

    Abstract: HY62SF16201A-I
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original
    HY62SF16201A 128Kx16bit HY62SF16201A Y62SF16201A HYSF621Ac 100ns 120ns HY62SF16201A-I PDF

    HY62SF16201A

    Abstract: HY62SF16201A-I
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


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    HY62SF16201A 128Kx16bit HY62SF16201A 16bit. HY6Y62SF16201A HYSF621Ac 100ns 120ns HY62SF16201A-I PDF

    BS62LV256-70

    Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
    Text: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: [email protected] Phone Number: 949-789-6274 Fax Number: 949-789-6277


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    32Kx8 128Kx8 256Kx8 BS62XV256-25 BS62UV256-15 BS62LV256-70 BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62LV256-70 M5M5408 BS62UV256-15 M5M5408B-55 t0808 PDF

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


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    PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2S F 16 20 1A S eries 128K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low


    OCR Scan
    16bit HY62SF16201A 16bit. HY62SF16201A-I x16bit HYSF621 100ns 120ns PDF

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


    OCR Scan
    GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16 PDF

    FBGA 9 x 20

    Abstract: HY62CT08081E hynix hy T0808
    Text: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25


    OCR Scan
    100ns 120ns 150ns 128KX 512Kx 256Kx HY62UF16101C HY62QF16101C HY62SF16101C HY62UF16201A FBGA 9 x 20 HY62CT08081E hynix hy T0808 PDF