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    hyundai hy 214

    Abstract: 202530 1DG05-22-MA
    Text: - HY UNDAI H Y 6 3 V 1 6 1 0 0 A S /H Y 6 3 V 1 6 1 O O AL 64K X 16 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The HY63V16100 uses sixteen common input and output lines and has an output enable pin which op­


    OCR Scan     		HY63V16100 576-bit 20/25/30ns HY63V16100S 140mA HY63V16100L 10MAX 004MAX hyundai hy 214 202530 1DG05-22-MA PDF

    1DG05-22-MAY96

    Abstract: No abstract text available
    Text: HYUNDAI H Y 6 3 V 1 6 1 0 0 A S /H Y 6 3 V 1 6 1 O O A L 64K 16 Bit FAST SRAM X PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The HY63V16100 uses sixteen common input and output lines and has an output enable pin which op­


    OCR Scan     		HY63V16100 576-bit 20/25/30ns HY63V16100S 140mA HY63V16100L 10MAX 004MAX 1DG05-22-MAY96 PDF