HX 830
Abstract: MI51TA-2 MI51TA-3
Text: MICRO IVllSllA-^ I51TA-3 INFRARED EMITTING DIODE 04.98 0.196 DESCRIPTION 1.0 1.3 '(0.05) (0 .0 4 f I51TA-2 & I51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diam eter clear transparent lens. 87 (0.34) 1.0 (0.04) “ (0.04) af* X Ü ~ —
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MI51TA-2
MI51TA-3
MI51TA-2
MI51TA-3
100mA
100mA
200mW
230mW
10/xs,
64lna,
HX 830
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diodes nm Po TYP (mw) M I31T 940 1.7 20 1.6 20 Clear transparent M I31TA 880 1.5 20 1.8 20 Clear transparent M I32T 940 1.5 20 1.6 20 Clear transparent M I32TA 880 1.3 20 1.8 20 Clear transparent M I33T 940 4.0 20 1.6 20 Clear transparent
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I31TA
I32TA
-V1IB33T
IB38T
I51TA
IB51T
IB51TA
IB57T-J
IB57TA-J
IB57T-K
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Untitled
Abstract: No abstract text available
Text: MICRO I51TA-2 I51TA-3 INFRARED EMITTING DIODE 0 4 .9 8 " 0.196 D E SC R IPT IO N 1.3 ( 0 .05 ) I51TA-2 & I51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 87 (0.34) 1.0 j~(0.04) 4.1 I 0.76 (0.16)
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OCR Scan
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PDF
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MI51TA-2
MI51TA-3
MI51TA-2
MI51TA-3
I51TA-2
10/xs,
100mA
I51TA-3
230mW
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