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Abstract: No abstract text available
Text: Perspective PowerPC IBM’s New PowerPC Strategy Roadmap It’s exactly what you’d expect from IBM. Editor’s note: This article is reprinted with permission from IBM. It originally ran in the April, 2001, IBM PowerPC Processor News. You can view the original article at:
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powerpc/newsletter/apr2001/lead
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5PAE
Abstract: BETA-100 5HPE ibm multi-emitter transistor BiCMOS
Text: IBM Systems and Technology Group IBM SiGe BiCMOS 5PAe Advanced through-silicon via technology for RF power applications New direction for power amplifier solutions Highlights ● Cost-effective 350-nm IBM SiGe BiCMOS specialty foundry technology ● Through-silicon via technology provides
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350-nm
TGD03011-USEN-04
5PAE
BETA-100
5HPE ibm
multi-emitter transistor
BiCMOS
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ASX 12 D Germanium Transistor
Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
Text: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques
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toshiba laptop battery pack pinout
Abstract: GTX3000P IBM POWER3 processor driclad toshiba laptop schematic diagram MCP Technology Trend P2SC stacked transistors SOI RF IBM Microelectronics ASIC ibm ASIC SRAM
Text: 4 volume 4 A publication of IBM Microelectronics IBM Helps Juniper Networks Produce Revolutionary Internet Backbone Router Nancy Adinolfe, R. K. Anand, and Alison Seaman In This Issue Introduction Fourth Quarter 1998, Vol. 4, No.4 1 IBM Helps Juniper Networks Produce
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64-bit
S/390TM
256-Mb
60-micron
10-mil
toshiba laptop battery pack pinout
GTX3000P
IBM POWER3 processor
driclad
toshiba laptop schematic diagram
MCP Technology Trend
P2SC
stacked transistors SOI RF
IBM Microelectronics ASIC
ibm ASIC SRAM
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PPC603
Abstract: "embedded systems" ethernet protocol meridian option 11 virtual tn RISCwatch Trace PPC601 0x00989680 RISCwatch RISCwatch API PowerPC Power ISA Architecture
Text: IBM OS Open User’s Guide Sixth Edition February 1998 This edition of IBM OS Open User’s Guide applies to IBM OS Open Version 1.6.1 and to subsequent versions of the OS Open Real-Time Operating System until otherwise indicated in new versions or technical newsletters.
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5HP ibm
Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
Text: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)
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07G522035300*
G522-0353-00
5HP ibm
5HP ibm SiGe HBT
sige hbt
germanium transistors NPN
IBM Microelectronics
Tech MOS Technology
Spiral Inductor technology
SiGe POWER TRANSISTOR
IBM SiGe
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IBM efuse
Abstract: BICMOS 250nm Nitride CMOS Stacked RF efuse MIM 205 IBM SiGe
Text: IBM Global Engineering Solutions SiGe BiCMOS 6WL: Next-generation benefits in a lower-cost technology SiGe BiCMOS 6WL enables clients to take advantage of FETs and eFuse devices based on the proven IBM CMOS RF offering, with the luxury of being able to exploit the advanced
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250-nm
TGD03010-USEN-01
IBM efuse
BICMOS
250nm
Nitride
CMOS Stacked RF
efuse
MIM 205
IBM SiGe
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PPC403GC
Abstract: V360EPC 403GC ID31 LA25 V292PBC V3 Semiconductor
Text: Interfacing IBM’s PowerPC 403GC to PCI using V360EPC from V3 Semiconductor 1. Objective This application note describes the interface between PPC403GC processors from IBM and V360EPC Enhanced PCI Controller EPC from V3 Semiconductor. The V360EPC family of
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403GC
V360EPC
PPC403GC
V292PBC
33MHz
50MHz
40MHz
ID31
LA25
V3 Semiconductor
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lna c band
Abstract: ibm battery pinout
Text: IBM3604011S010 GSM Tri-Band Low Noise Amplifier Preliminary Features Applications • IBM’s integrated SiGe BiCMOS technology • Receive operation in the GSM900, DCS1800, PCS1900 bands • Receiver designs for single, dual, or triple mode handsets operating in the GSM900, DCS1800,
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IBM3604011S010
GSM900,
DCS1800,
PCS1900
GSM900
10-lead
LNA4011
lna c band
ibm battery pinout
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3g call flow
Abstract: 24ghz radar sensors 180NM uwb radar ckt uwb transceiver 3g data call flow 802.11n transceiver sensor radar uwb uwb radar uwb radar sensor
Text: Foundry Solutions IBM and Cadence collaborate to accelerate silicon-accurate design of advanced RF integrated circuits. frequencies and smaller process Highlights geometries of integrated wireless designs produce additional parasitic Wireless explosion drives demand
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sw dip-4/sm
Abstract: dip-4/sm
Text: IBM3604012Q016 Datasheet Dual-band CDMA Low Noise Amplifier Features Applications • IBM’s integrated SiGe BiCMOS technology • CDMA / AMPS operation in the Cellular and PCS receive bands • Single and dual mode CDMA and AMPS handsets receiving in the Cellular 869-894MHz, and
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IBM3604012Q016
869-894MHz,
1930-1990MHz
lna4012
sw dip-4/sm
dip-4/sm
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microwave transceiver
Abstract: abstract for wireless communication system loop gain of Colpitts VCO design 5ghz microwave transceiver 3.5 GHz microwave transceiver sensitivity loop gain of Colpitts VCO design 4 ghz 0.18 um CMOS Spiral Inductor technology bjt microwave GHz Drive Base BJT 5.8 ghz Transceiver IC
Text: The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems Mehmet Soyuer IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 E-mail: [email protected] Abstract This paper focuses on low power and high integration capabilities of SiGe BiCMOS
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Abstract: No abstract text available
Text: IBM3604012EVBA Application Note Dual-band CDMA Low Noise Amplifier Features Applications • IBM’s SiGe dual band CDMA dual band LNA • 869-894MHz cellular and 1930-1990MHz (PCS) receive bands operation • CDMA and AMPS handsets receiving in the Cellular 869-894MHz, and PCS 1930-1990MHz
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IBM3604012EVBA
869-894MHz
1930-1990MHz
75-volt
869-894MHz,
1930-1990MHz
lna4012
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germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
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IBM43RF0100
IBM43RF0100EV
823Vdc.
germanium transistors PNP
SiGe RF TRANSISTOR
pnp germanium transistor
SiGe PNP
TRANSISTOR MAKING LIST
SiGe PNP transistor
FMMT2907ATA
bipolar transistor ghz s-parameter
J1 TRANSISTOR
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QFN-12
Abstract: IBM3115Q012 NC12 QFN12
Text: IBM3115Q012 Product Overview Tri-Band GSM Integrated Voltage Controlled Oscillator Advance Features Applications • IBM Silicon Germanium BiCMOS 5DM Technology with Cu Metallurgy • GSM/DCS/PCS tri-band direct conversion receivers • Small-footprint, low-profile QFN-12 package
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IBM3115Q012
QFN-12
IBM3115Q012
QFN-12)
vco3115
NC12
QFN12
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photoreceiver
Abstract: VCSEL array, 850nm high speed photoReceiver Modules
Text: Low-cost, high-speed transceivers for Gigabit Ethernet and Fibre Channel applications Gigabit 1x9 Optical Transceivers A broad optical portfolio The IBM Gigabit 1×9 Optical Transceiver is a state-of-the-art component designed expressly for building highspeed bi-directional communication
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G522-0615-00
photoreceiver
VCSEL array, 850nm
high speed photoReceiver Modules
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fake bogus
Abstract: BLR MQ 6 B110 B134 B150 B200 B300 B600 dbljblen B4800
Text: Copyright 1995 Sun Microsystems Inc., 2550 Garcia Avenue, Mountain View, Californie 94043-1100 USA. Tous droits réservés. Copyright 1993 IBM Corporation.Tous droits réservés. Ce produit ou document est protégé par un copyright et distribué avec des licences qui en restreignent l’utilisation, la copie
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PowerPC 401
Abstract: IBM43GAENGP0001
Text: Advanced turn-key solution with SiGe front-end GPS Receiver Highlights Plug-and-play technology with extra compute power State-of-the-art global positioning system GPS chipset plus the support functions required for a complete solution Leading-edge technology, the
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07G522037102*
G522-0371-02
PowerPC 401
IBM43GAENGP0001
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ibm battery pinout
Abstract: No abstract text available
Text: IBM SGRF4111 IBM SGRF4111EV Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band VCO Advance Features • 880MHz/1850MHz center frequency for GSM Tri-Band • Efficiency and power management, ideal for battery mobile design • Flexible design with multiband VCO output
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SGRF4111
SGRF4111EV
880MHz/1850MHz
TSSOP-16
IBMSGRF4111
IS-95/IS-98
IS-136.
ibm battery pinout
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RF1113
Abstract: 43RF1113 tl945 IBM REV 2.7
Text: I = = = = '= IBM 43RF1113 IBM 43RF1113 EV Advance Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band LNA Features • 945M H z/1900M H z center frequency for GSM • E fficiency and pow er m anagem ent, ideal for b attery m obile design Tri-Band • Flexible design w ith independent LNA input and
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z/1900M
43RF1113
RF1113
43RF1113,
F1113
43RF113
tl945
IBM REV 2.7
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IBM REV 2.8
Abstract: rev 1.5 ibm ibm rev 1.5
Text: IBM 43RF4111 IBM 43RF4111EV Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band VCO Advance Features • 880M H z/1850M H z center frequency for GSM Tri-Band • Flexible design w ith m ultiband VC O output • E fficiency and pow er m anagem ent, ideal for b attery m obile design
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43RF4111
43RF4111EV
z/1850M
-95/IS-98
IS-136.
TSSOP-16
sgrf41111
IBM43RF4111
IBMSGRF4111
IBM REV 2.8
rev 1.5 ibm
ibm rev 1.5
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s122k
Abstract: No abstract text available
Text: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000MHz Low Noise Amplifier Features • 0 .8 to 2G H z operation for cellular and digital wireless applications • Low power, single supply 3 volts • • High IIP3 and Low Noise meet demanding system requirements
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43RF1111
800-2000MHz
T23-6
-95/IS
IS-136.
s122k
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Untitled
Abstract: No abstract text available
Text: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Am plifier Features • 0.8 to 2G H z operation fo r cellular and digital w ireless applications • High IIP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts
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43RF1111
T23-6
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Untitled
Abstract: No abstract text available
Text: IBMSGRF2113 IBMSGRF2113 EV SiGe 3-V PCS-Band: Tri-Band Image Reject Mixer with LNA Advance Features • 900MHz and 1900MHz operation for GSM900, DCS1800, and PCS1900 • Low side LO injection and High IF simplify filter response requirements • Low power with sleep mode and single supply
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IBMSGRF2113
IBMSGRF2113
900MHz
1900MHz
GSM900,
DCS1800,
PCS1900
TSSOP-16
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