Diode marking CODE 5M
Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPWT1G
500mA
Diode marking CODE 5M
diode 50M marking code
LDTBG12GPWT1G
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
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LDTBG12GPLT1G
Abstract: 102k1k marking 20M resistor 20M diode zener
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPLT1G
500mA
OT-23
LDTBG12GPLT1G
102k1k
marking 20M resistor
20M diode zener
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20M diode zener
Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPT1G
500mA
SC-89
463C-01
463C-02.
20M diode zener
102k1k
LDTDG12GPT1G
SC-89
transistor collector diode protection
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating
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2SD2351
50mA/5mA)
100ms.
50mA/5mA
-10mA,
100MHz
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BJW transistor
Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol
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2SD2351
50mA/5mA)
100ms.
50mA/5mA
-10mA,
100MHz
BJW transistor
SMD transistor MARKING bjw
marking bjw
MARKING BJV
transistor bjv
TRANSISTOR bjw
2SD2351
hFE CLASSIFICATION Marking
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102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPLT1G
500mA
OT-23
102k1k
20M diode zener
LDTDG12GPLT1G
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2SB1259
Abstract: 2SD2081 FM20 12v dc to 6v dc
Text: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)
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2SD2081
2SB1259)
10max
Pulse15)
120min
2000min
60typ
95typ
2SB1259
2SD2081
FM20
12v dc to 6v dc
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DTDG14GP
Abstract: T100 sc-62 zener
Text: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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DTDG14GP
500mA
SC-62
DTDG14GP
T100
sc-62 zener
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zener diode
Abstract: Zener Diode 5A high hfe transistor transistor Ic 1A datasheet NPN digital transistor diode Zener DTDG14GP zener- diode "Zener Diode" TA DIODE ZENER
Text: Transistors Digital transistor built in resistor and zener diode Driver (60V,1A) DTDG14GP FFeatures 1) High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2) Low saturation voltage, typically VCE(sat) = 0.4V at IC /IB = 500mA / 5mA. 3) Built-in zener diode to protect the
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DTDG14GP
500mA
96-376-DG14GP)
zener diode
Zener Diode 5A
high hfe transistor
transistor Ic 1A datasheet NPN
digital transistor
diode Zener
DTDG14GP
zener- diode
"Zener Diode"
TA DIODE ZENER
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
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2N3904A
2N3906A.
100mA
100MHz
x10-4
Width300
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2N3906-A
Abstract: 2N3906A
Text: SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
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2N3906A
-50nA
-50mA,
2N3904A.
-50mA
-100mA
-10mA,
2N3906-A
2N3906A
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STD6528S
Abstract: Transistor sot-23 MARKING CODE ZA
Text: STD6528S Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE sat =0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 Ordering Information Type NO.
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STD6528S
OT-23
KSD-T5C038-000
STD6528S
Transistor
sot-23 MARKING CODE ZA
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STD6528EF
Abstract: Transistor MARKING CODE SMD IC marking code CB SMD ic MARKING SMD IC CODE SMD code ZB TRANSISTOR SMD MARKING CODE marking code diode Eb SMD SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ce
Text: STD6528EF Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE sat =0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 • Small size SMD package
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STD6528EF
OT-523F
KSD-T5E003-000
STD6528EF
Transistor
MARKING CODE SMD IC
marking code CB SMD ic
MARKING SMD IC CODE
SMD code ZB
TRANSISTOR SMD MARKING CODE
marking code diode Eb SMD
SMD MARKING CODE transistor
TRANSISTOR SMD MARKING CODE ce
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
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2N5031
To-72
Vdc21|
2N5031
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2N5031
Abstract: MSC1303
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
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2N5031
To-72
MSC1303
2N5031
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2N3904N
Abstract: 2N3906N T0-92N 2N3906 2N3906 PNP transistor
Text: 2N3906N Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector-emitter saturation voltage : 0.4V Max. @ IC=-50mA, IB=-5mA • Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz
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2N3906N
-50mA,
2N3904N
2N3906
T0-92N
KSD-T0C039-000
2N3904N
2N3906N
T0-92N
2N3906
2N3906 PNP transistor
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2n2857 UHF transistor common base amplifier
Abstract: 2n2857 common base amplifier 2N2857 transistor TO-72
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •
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2N2857
To-72
MSC1066
2n2857 UHF transistor common base amplifier
2n2857 common base amplifier
2N2857
transistor TO-72
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2n2857 UHF transistor common base amplifier
Abstract: 2n2857 2n2857 common base amplifier 2n2857 data sheet
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •
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2N2857
To-72
2N2857
2n2857 UHF transistor common base amplifier
2n2857 common base amplifier
2n2857 data sheet
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LCP02-150B1
Abstract: VDE0433 VDE0878 4565A 110v thyristor cn GP 502
Text: LCP02-150B1 PROTECTION IC FOR RINGING SLICS A.S.D. FEATURES • ■ ■ ■ ■ ■ Protection IC recommended for ringing SLICs. Wide firing voltage range: from -110V to +95V. Low gate triggering current: IG = 5mA max. Peak pulse current: IPP = 30A 10/1000µs .
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LCP02-150B1
-110V
150mA
UL497B
E136224)
LCP02-150B1
VDE0433
VDE0878
4565A
110v thyristor
cn GP 502
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KRC285U
Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)
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KRC281U
KRC286U
KRC281U
KRC282U
KRC285U
KRC283U
KRC284U
KRC285U
KRC286U
audio transistor
KRC282U
KRC283U
KRC284U
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2n2857 UHF transistor common base amplifier
Abstract: 2N2857
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •
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2N2857
To-72
2N2857
2n2857 UHF transistor common base amplifier
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2N3904N
Abstract: 2N3904 tr 2n3904
Text: 2N3904N Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE sat =0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz
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2N3904N
STA3906A
2N3904
O-92N
KSD-T0C036-000
2N3904N
2N3904
tr 2n3904
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MT3S07U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U Unit in mm VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure High Gain 2.1 NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz |S2lel2 = 9.5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)
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MT3S07U
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)
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MT3S07S
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