Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each
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WSF128K32V-XG2TX
128KX32
120ns
128K32
120ns
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S128K32
Abstract: ACT-S128K32 ACT-S128K32V 5962-9559509HMX 5962-9318710H4X
Text: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
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ACT-S128K32
MIL-STD-883
ACT-S128K32
SCD1659
S128K32
ACT-S128K32V
5962-9559509HMX
5962-9318710H4X
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29h2
Abstract: CQFj 44 29g2
Text: WSF512K32-29XX HI-RELIABILITY PRODUCT 512KX32 SRAM / FLASH MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Packaging • 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic
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WSF512K32-29XX
512KX32
64KBytes
512K32
29h2
CQFj 44
29g2
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Untitled
Abstract: No abstract text available
Text: ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module Features 4 Low Power CMOS 128K x 8 SRAMs in one MCM • Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
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ACT-S128K32V
MIL-PRF-38534
MIL-STD-883
SCD3359
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5962-9318706H4X
Abstract: military mcm 1553 ACT-S128K32 ACT-S128K32V 5962-9318705HTX 5962-9318706HTX 5962-9318709H4X
Text: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
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ACT-S128K32
MIL-STD-883
ACT-S128K32
SCD1659
5962-9318706H4X
military mcm 1553
ACT-S128K32V
5962-9318705HTX
5962-9318706HTX
5962-9318709H4X
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Untitled
Abstract: No abstract text available
Text: WE128K32-XXX HI-RELIABILITY PRODUCT 128Kx32 EEPROM MODULE, SMD 5962-94585 FEATURES • Access Times of 120, 140, 150, 200, 250, 300ns ■ Packaging: • 66-pin, PGA Type, 27.3mm 1.075" square, Hermetic Ceramic HIP (Package 400) ■ ■ ■ ■ ■ ■ ■
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WE128K32-XXX
128Kx32
300ns
66-pin,
128Kx32;
256Kx16
512Kx8
01H5X
02H5X
03H5X
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Untitled
Abstract: No abstract text available
Text: 1CY M18 28 PRELIMINARY CYM1828 32K x 32 Static RAM Module Features is constructed using four 32K x 8 static RAMs mounted onto a multilayer ceramic substrate. Four chip selects CS1, CS2, CS3, CS4 are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any
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CYM1828
66-pin,
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WE128K32-XG1TX
Abstract: WE128K32-XG1UX WE128K32-XH1X WE128K32-XXX WE128K32-XG2TX
Text: WE128K32-XXX 128Kx32 EEPROM MODULE, SMD 5962-94585 FEATURES • ■ ■ ■ ■ ■ ■ ■ Low Power CMOS Automatic Page Write Operation Page Write Cycle Time: 10ms Max Data Polling for End of Write Detection Hardware and Software Data Protection TTL Compatible Inputs and Outputs
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WE128K32-XXX
128Kx32
WE128K32-XG2TX1
WE128K32-XG1UX
WE128K32-XG1TX
WE128K32-XH1X
300ns
66-pin,
02HMX1
200ns
WE128K32-XXX
WE128K32-XG2TX
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 80*, 90, 120, 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
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WE32K32-XXX
Abstract: No abstract text available
Text: White Electronic Designs WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 80*, 90, 120, 150ns Data Retention at 25°C, 10 Years MIL-STD-883 Compliant Devices Available Write Endurance, 10,000 Cycles Packaging: • 68 lead, Hermetic CQFP G2U , 122.4mm
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
32Kx32;
64Kx16
128Kx8
66-pin,
01HXX
WE32K32-XXX
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WSF512K32-XXX
Abstract: No abstract text available
Text: White Electronic Designs WSF512K32-XXX 512KX32 SRAM / FLASH MODULE FEATURES Access Times of 25ns SRAM and 70, 90ns (FLASH) Packaging • 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic HIP (Package 402) FLASH MEMORY FEATURES • 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880")
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WSF512K32-XXX
512KX32
64KBytes
512K32
WSF512K32-XXX
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WSF41632-22XX
Abstract: wsf41632 WSF41632-22H2X
Text: White Electronic Designs WSF41632-22XX PRELIMINARY* 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE FEATURES Built-in decoupling caps and multiple ground pins for low noise operation Access times of 25ns SRAM and 120ns (FLASH) Weight - 13 grams typical Packaging
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WSF41632-22XX
128KX32
512Kx32
120ns
64KBytes
120ns
WSF41632-22XX
wsf41632
WSF41632-22H2X
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Untitled
Abstract: No abstract text available
Text: WSF128K32-XH2X PRELIMINARY* 128KX32 SRAM/FLASH MODULE FEATURES FLASH MEMORY FEATURES Access Times of 25ns SRAM and 70, 90 and 120ns (FLASH) 10,000 Erase/Program Cycles Sector Architecture Packaging: • 8 equal size sectors of 16K bytes each
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WSF128K32-XH2X
128KX32
120ns
66-pin,
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TL 1838
Abstract: No abstract text available
Text: 128K x 32 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module The CYM1838 is a very high perform ance 4-megabit static R A M m odule organized as 128K words by 32 bits. T he m odule is constructed using four 128K x 8 static
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CYM1838
66-pin,
1838H
66-Pin
TL 1838
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Untitled
Abstract: No abstract text available
Text: 64KX4 BASED Dense-Pac Microsystems, inc. C M O S SRAM FAM ILY DESCRIPTION: The Dense-Pac 64K X4 Based Fam ily consists of static ra n d o m a c c e s s m e m o rie s S R A M S o rg a n iz e d as described below. T h ese m em ories are ideally suited for use in large
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64KX4
DPS5124
DPS5124-45C
DPS5124-55C
DPS5124-55I
24-55M
DPS6432-45C
DPS6432-55C
DPS6432-55I
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LT 1385
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS 128Kx32 SRAM/FLASH MODULE WSF128K32-XH2X PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 25ns SRAM and 120ns (FLASH) ■ ■ A cce ss Tim es of 25ns (SRAM ) and 90ns (FLASH) ■ Sector A rc h ite c tu re • 8 equal size sectors o f 16K bytes each
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WSF128K32-XH2X
128Kx32
120ns
66-pin,
128K32
120ns
LT 1385
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SAMSUNG SRAM
Abstract: 5962-9318706H4X D1659
Text: ii ii ii ii ii ii ii ii ACT-S128K32 High Speed - 4 iviegamt o k a m iviuiticnip ivioauie . • ■■ A ■ ■ ■ ■ ■ I ■■ I Features ■ ■ ■ ■ ■ ■ ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM
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ACT-S128K32
68-Lead,
66-Lead,
SCD1659
SAMSUNG SRAM
5962-9318706H4X
D1659
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Untitled
Abstract: No abstract text available
Text: P CYM1828 PRELIMINARY / CYPRESS 32K x 32 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • 66-pin, 1.1-inch-square PGA package • Low active power — 3.3W max.
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CYM1828
66-pin,
CYM1828LHG-35C
66-Pin
CYM1828HGâ
CYM1828LHGâ
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Untitled
Abstract: No abstract text available
Text: WF128K32-XXX WHITE /MICROELECTRONICS □ 128Kx32 12V FLASH MODULE, SMD 5962-94610 FEATURES • Access Tim es of 120,150 and 200nS Organized as 128Kx32 ■ Packaging Commercial, Industrial and M ilita ry T e m p e ra tu re Ranges • 66 pin, PGA Type, 1.075 inch square, Hermetic
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WF128K32-XXX
128Kx32
200nS
128Kx32
01HXX
150nS
5962-9461002H
120nS
5962-9461003H
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CA051
Abstract: 16A06
Text: Z2 WF128K32-XXX M/HITE /M IC R O ELEC T R O N IC S 128Kx3212V FLASH MODULE • Organized as 128Kx32 FEATURES ■ 12 V o lt Programming; 5V ±10% Supply ■ Access Times of 120, 150 and 200nS ■ Low Power CMOS, 4m A Standby Typical ■ Packaging ■ Hardw are and Softw are W rite Protection
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WF128K32-XXX
128Kx3212V
200nS
128Kx32
WF128K32-XHX
WF128K32-XG4X
66-pin,
200nS
150nS
120nS
CA051
16A06
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Untitled
Abstract: No abstract text available
Text: 128Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • A ccess Times of 120 and 150nS ■ ■ Packaging ■ Organized as 128Kx32 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Programming. 5V ± 1 0 % Supply. ■ Low Power CM OS, 1.5mA Standby
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128Kx32
150nS
128Kx32
66-pin,
128Kx
128Byte
01HXX*
120nS
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