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    IHb si

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time


    OCR Scan     		535-words IDT10507 IDT100507 IDT101507 IDT10507, IDT101507 144bit ECL-100K IHb si PDF

    Untitled

    Abstract: No abstract text available
    Text: fcitegrated Oevlc« Tethnologr, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • 65,535-words x 4-bit organization • Address access time: 12/15 ns • Read Data output latch for extended hold time • Short Write Cycle input data and address valid time


    OCR Scan     		IDT10507 IDT100507 IDT101507 535-words IDT10507, IDT101507 144bit ECL-10K PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE HIGH-SPEED BiCMOS INFORMATION ECL STATIC RAM IDT 10507 256K 64K x 4-BIT IDT 100507 WITH SYNCHRONOUS WRITE FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization • Address access time: 12/15 ns (max.) • Low power dissipation: 800mW (typ.)


    OCR Scan     		535-words 800mW IDT10507 IDT100507 144-bit ECL-10Kand ECL-100K, S12-76 IDT105 400mll) PDF