DSS41A05
Abstract: dss41a12 dss41a24 DSS41B05 DSS41A05 SRC devices mss41a12 SIL41A05 DSS41B12 MSS41A05 SIL41B05
Text: DEVICES SRC SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 SPECIFICATIONS MVS4 Non-Position-Sensitive Hg-Wetted SYMBOL MIN TYP MAX MIN TYP MAX VL IL IC CR - - 1000 1 2 3 50(4) 100 - - - 1000 2 50 7 Hg 40 - 200 7 Hg 16 500 2 3 50 100 - IR 1010 1012 - 108 1010
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1-866-SRC-8668
DSS41A05
dss41a12
dss41a24
DSS41B05
DSS41A05 SRC devices
mss41a12
SIL41A05
DSS41B12
MSS41A05
SIL41B05
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PDF
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DFJ10E
Abstract: DBF60B DBB08B DLC20C DBF60E DBA150E DO-41SS
Text: High-speed Rectifiers Super fast-recovery diodes V rm (V) lo (A) 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C DFE30E DFE30G Package type trr (ns} 600 200 100 y - .il DO-41 SS, 5 mm pitch 100 DO-15L 100 DO-201 AD Very High-speed Rectifiers (Low-loss diodes)
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DFJ10C
DFJ10E
DFJ10G
DO-41SS,
DFD15C
DFD15E
DFD15G
DO-15L
DFE30C
DFE30E
DBF60B
DBB08B
DLC20C
DBF60E
DBA150E
DO-41SS
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2N7236
Abstract: 2N7236 JANTXV 2N7236 JANTX KIV* diode CCII APPLICATION me 555 IRFM9140 D 1380 Transistor
Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER | I R | REPETITIVE AVALANCHE RATED AND dv/dt RATED •RFM914Q SN7S36 JAIMSSN7S36 JANTXSN7S36 JAIMTXVSN7S36 TRANSISTOR Il P-CHANNEL [REF: M IL-S-19500/S9B ] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET technology is the key to International
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OCR Scan
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IRFMS14Q
JANSSN7S36
JANTXSN7S36
JANTXVSN7S36
MIL-S-19500/S9B]
IRFM9140O.
IRFM9140U
O-254
MIL-S-19500
2N7236
2N7236 JANTXV
2N7236 JANTX
KIV* diode
CCII APPLICATION
me 555
IRFM9140
D 1380 Transistor
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PDF
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33N10
Abstract: SGS Transistor
Text: STP33N1o STP33N10FI SGS-THOMSON iLü «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N 10 STP33N 10FI V dss RDS on Id 100 V 0 .0 6 L i 33 A 100 V 0 .0 6 a 18 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STP33N1o
STP33N10FI
STP33N
O-220
ISOWATT220
STP33N1
33N10
SGS Transistor
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 180N10 V DSS = 100 ISOPLUS247™ ^D25 ” 165 VDSS ^ = 25°Cto150°C Tj = 25°Cto 150°C; RGS= 1 M il 100 100 V V Continuous Transient +20 ±30 V V '*n Tc = 25° C MOSFET chip capability External lead (current limit)
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OCR Scan
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180N10
ISOPLUS247TM
Cto150
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PDF
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IXYS DS 145
Abstract: No abstract text available
Text: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS
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67N10
75N10
to150
75N10
O-247
T0-204
O-204
IXYS DS 145
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PDF
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GC2269
Abstract: No abstract text available
Text: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION
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STP3N50XI
ISOWATT221
GC22690
GC2269
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PDF
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Untitled
Abstract: No abstract text available
Text: v il ^ i\ iv A IL IN A January 1993 FEATURES • 100% architecture, pin out, and software compatible with XC3000 devices • Ultra-High speed, up to twice that of XC3000-125 - 50-80 MHz system clock rates - Flip-flop toggle rates of 190 to 270 MHz - Performance equivalent to 10 ns PALs in many
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XC3000
XC3000-125
XC3120
X2649
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PDF
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STH4N80
Abstract: No abstract text available
Text: SGS-THOMSON KLtKSTT^OKlDCeS STH4N80 STH4N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH4N80 STH4N80FI V dss R dS oii Id 800 V 800 V 3 Q 3 il 4.3 A 2.8 A . • . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STH4N80
STH4N80FI
STH4N80/FI
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PDF
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rs103
Abstract: DC028 D461D
Text: ANALOG DEVICES 28 V/100 WDODC Converters with Integral B il Fiter ÆDC02812D/VÆDC02815DA FEATURES 28 V de Input, ± 1 2 V d c < >8.34 A, 100 W Output ADDC02812DA 28 V de Input, ± 1 5 V d c ( 16.68 A, 100 W Output (ADDC02815DA) Integral EMI Filter Designed to Meet MIL-STD-461D
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ADDC02812DA)
ADDC02815DA)
MIL-STD-461D
DC02812D/V
DC02815DA
rs103
DC028
D461D
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Untitled
Abstract: No abstract text available
Text: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
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STE180N10
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PDF
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MRD500
Abstract: theory phototransistor AN-440 MRD300 theory phototransistor RD510 MRD510 AN-508 AN508 glass lens phototransistor
Text: MRD500 silicon MRD510 100 VO LT PHOTO DIO D E PIN SILIC O N PIN SIL IC O N PHOTO DIO DE 100 M IL L IW A T T S . designed for application in laser detection, light demodulation, detection of visible and near infrared light-emitting diodes, shaft or position encoders, switching and logic circuits, or any design requiring
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MRD500
MRD510
MRD500)
RD510)
MRD300
AN-508
MRD500
theory phototransistor AN-440
theory phototransistor
RD510
MRD510
AN508
glass lens phototransistor
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PDF
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2033C
Abstract: TRANSISTOR SN 5551
Text: WCH p r^ i CRMANCE ANALOG IN~EGRATEi: CIRCU'TS Features • Differential gain 0.1% • Differential phase 0.1° • 100 mA continuous output current guaranteed • Short circuit protected • Wide bandwidth— 100 MHz • High slew rate—1200 V/^is • H igh input impedance—2 M il
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EL2003C/EL2033C
EL2003/EL2033
3121SS7
2033C
TRANSISTOR SN 5551
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PDF
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diode BY127
Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/
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00D3315
D041/D015
D0204/
GP10A
BYW27-50
1N4Q017
M100A
GP10B
8YW27-1O0
1N4002
diode BY127
BY127 diode
diode cross reference 1N4007
diode zener 1n4002
diode M100J
zener diode cross reference
P diode by127
g1g diode
GP15M "cross reference"
1N4007 ZENER DIODE
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mtp3n
Abstract: TP3N60 A1412
Text: Si TYPE . MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss MTP3N60 MTP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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MTP3N60
MTP3N60FI
MTP3N60/FI
mtp3n
TP3N60
A1412
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PDF
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diodes byt
Abstract: diodes byw VRRM 600 IO 20 IN1344B 61100 IN1190
Text: THOMSON M IL E T S P A T IA U X SSE T> • T D 2 b fl7 E DDDDMflfl i m ■THCP1 T^&f- DESCRIPTION PRODUCT PACKAGE According to CECC 50000 DISCRETE COMPONENTS RECTIFIER DIODES = 50 V I0 = 12 A ■ BYW 88-100, R * v r r m = 100 V l0 = 12 A ■ BYW 88-200, (R)* V rrm = 200 V
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PDF
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IRF150M
Abstract: No abstract text available
Text: SGS-THOMSON * 5 iL iO T O K S 7 IR F 150 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 1 5 0 . . . . • V d ss 100 V R D S o n Id 0 .0 5 5 n 40 A AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA A T 100°C
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OCR Scan
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IRF150
IRF150M
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PDF
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diode BY127 specifications
Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/
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00G3315
D041/D015
D0204/VP
GP10A
GP10B
GP10D
BYW27-50
BYW27-100
BYW27-200
BY135GP
diode BY127 specifications
GE diode 1N5061
diode by127
GP 524 DIODE
diode cross reference 1N4245
diode 1n5392
GP+524+DIODE
BYW27-40Q
D0201AD
1N4245
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PDF
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14N05
Abstract: BR03 TK14N GCJ4360
Text: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C
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STK14N05
STK14N06
STK14N
OT-82
OT-194
STK14N05/STK14N06
GC344
14N05
BR03
TK14N
GCJ4360
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PDF
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n52a
Abstract: STVHD90FI STVHD90
Text: SGSTHOMSON STVHD90 STVHD90FI IL D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STVHD90 STVHD90FI 50 V 50 V R d S ofi 0.023 U 0.023 n Id 52 A 29 A . . . . . . AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STVHD90
STVHD90FI
STVHD90/FI
n52a
STVHD90FI
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PDF
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TP6N60
Abstract: 6N60
Text: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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TP6N60
TP6N60
6N60
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PDF
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IRF9520
Abstract: VG 9523 g a 9523 g IRF9523 9523 IRF9521 9521
Text: IRF9520/9521 /9522/9523 C Z ”S ilico n ix <A Jf in c o rp o ra te d P-Channel Enhancement Mode Transistors TQ-220AB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS IRF9520 r DS(ON) •d (il) (A) -100 0.60 -6.0 IRF9521 -60 0.60 -6.0 IRF9522 -100 0.80 -5.0
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IRF9520/9521
TQ-220AB
IRF9520
IRF9521
IRF9522
IRF9523
VG 9523 g
a 9523 g
IRF9523
9523
9521
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PDF
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irf9530
Abstract: irf 9530 f953
Text: IRF9530/9531 /9532/9533 c r S ilic a n ix in c o rp o ra te d P-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V) lDS(ON) ( il) (A) IRF9530 -100 0.30 -1 2 IRF9531 -6 0 0.30 -1 2 IRF9532 -100 0.40 -10 IRF9533
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IRF9530/9531
O-22QAB
IRF9530
IRF9531
IRF9532
IRF9533
Ener33
F9531,
IRF953
irf 9530
f953
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON BUZ71A BUZ71AFI M N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss R d S on Id BUZ71A BUZ71 AFI 50 V 50 V 0.1 2 il 0.1 2 Q 16 A 11 A . • . . . ■ . AVALANCHE RU G G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C
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BUZ71A
BUZ71AFI
BUZ71
O-220
ISOWATT22Q
ATT220
BUZ71A/BUZ71AFI
GC34400
GC201BQ
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PDF
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