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Catalog Datasheet	MFG & Type	Document Tags	PDF
1090mhz signal Abstract: ILD1011 ILD1011M400 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer Text: Part Number: Integra ILD1011M400 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M400 ILD1011M400 ILD1011M400-REV-PR4-DS-REVPR4 1090mhz signal ILD1011 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer	PDF
ILD1011M160HV Abstract: No abstract text available Text: Part Number: Integra ILD1011M160HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M160HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M160HV ILD1011M160HV ILD1011M160HV-REV-NC-DS-REV-B	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device	Original	ILD1011M30 ILD1011M30 ILD1011M30-REV-NC-DS-REV-B	PDF
Untitled Abstract: No abstract text available Text: Part Number: ILD1011M450HV Preliminary Integra TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M450HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M450HV ILD1011M450HV ILD1011M450HV-REV-PR1-DS-REV-A	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device	Original	ILD1011M15 ILD1011M15 ILD1011M15-REV-NC-DS-REV-B	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M400 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M400 ILD1011M400 ILD1011M400-REV-NC-DS-REV-I	PDF
ILD1011M250 Abstract: ild10 Text: Part Number: Integra ILD1011M250 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M250 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M250 ILD1011M250 ILD1011M250-REV-NC-DS-REV-A ild10	PDF
Integra Technologies Abstract: No abstract text available Text: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M15HV ILD1011M15HV ILD1011M15HV-REV-NC-DS-REV-E Integra Technologies	PDF
transistor BD 522 Abstract: J023 Text: Part Number: Integra ILD1011M550HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M550HV ILD1011M550HV ILD1011M550HV-REV-NC-DS-REV-A transistor BD 522 J023	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M280HV Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M280HV ILD1011M280HV ILD1011M280HV-REV-PR1-DS-REV-B	PDF
bd 142 transistor Abstract: No abstract text available Text: Part Number: Integra ILD1011M150 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M150 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M150 ILD1011M150 ILD1011M150-REV-NC-DS-REV-B bd 142 transistor	PDF
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Text: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode	PDF
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H	PDF
sot-89 BV SMD TRANSISTOR MARKING CODE Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer Text: RFマニュアル第14版 RF製品用のアプリケーションおよび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ	Original	NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer	PDF