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    INFINEON X-GOLD 213 Search Results

    INFINEON X-GOLD 213 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CN-AC3MMDZBAU Amphenol Cables on Demand 3-Pin XLR Male Panel Mount Connector - Amphenol AC3MMDZB-AU - Solder Type (Black + Gold Contacts) Datasheet
    CN-ACPRREDAA0 Amphenol Cables on Demand RCA Male Plug Cable Connector (Red) - Amphenol ACPR-RED - Gold Plated Diecast Shell Datasheet
    AV-3.5MINYRCA-015 Amphenol Cables on Demand Amphenol AV-3.5MINYRCA-015 Stereo Y Adapter Cable - Premium Gold Stereo 3.5mm (Headphone Plug) to Dual RCA Y Adapter Cable - 3.5mm Mini-Stereo Male to Dual RCA Male 15ft Datasheet
    DA14580 PLT Golden Unit Renesas Electronics Corporation Bluetooth® Low Energy 16-site Production Line Tool Kit Golden Unit Daughterboard Visit Renesas Electronics Corporation
    101015147502A Amphenol Communications Solutions T-flash Card Hingd With 15u\\ Gold Visit Amphenol Communications Solutions

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    Infineon X-GOLD 213

    Abstract: X-GOLDTM213 xgold 213 infineon x-gold X-GOLD 208 INFINEON infineon baseband processor x-gold 208 X-GOLD 213 INFINEON xgold X-GOLD x-gold 213
    Text: Product Brief X-GOLDTM213 Lowest-cost EDGE Single-Chip Solution for Mobile Internet Browsing & Messaging Main Features THE Infineon X-GOLD 213 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit


    Original     		PDF X-GOLDTM213 X-GOLDTM101 X-GOLDTM213 ARM11nces. B153-H9150-G1-X-7600 NB08-1329 Infineon X-GOLD 213 xgold 213 infineon x-gold X-GOLD 208 INFINEON infineon baseband processor x-gold 208 X-GOLD 213 INFINEON xgold X-GOLD x-gold 213

    Untitled

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60-watt, H-30265-2 PTFA210601F* H-31265-2

    PTFA210601E

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60watt, PTFA210601F*

    LM7805

    Abstract: a2031
    Text: PTFA210451E PTFA210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTFA210451E and PTFA210451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210451E PTFA210451F 45-watt, PTFA210451F* LM7805 a2031

    PTMA210452EL

    Abstract: PTMA210452FL RO4350 GRM422Y5V106Z050AL
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452EL PTMA210452FL 45-watt, H-33265-8 H-34265-8 50-ohm RO4350 GRM422Y5V106Z050AL

    PTFB211501E

    Abstract: PTFB211501F R250 H-36248-2
    Text: Preliminary PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETS designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, PTFB211501F* H-37248-2 R250 H-36248-2

    GRM422Y5V106Z050AL

    Abstract: PTMA210452EL PTMA210452FL RO4350
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452EL PTMA210452FL 45-watt, H-33265-8 H-34265-8 GRM422Y5V106Z050AL RO4350

    LM7805

    Abstract: PTFA212001E
    Text: PTFA212001E PTFA212001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are thermally-enhanced, 200-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA212001E PTFA212001F 200-watt, H-30260-2 H-31260-2 LM7805

    PTMA210452FL

    Abstract: PTMA210452EL
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452FL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452FL 45-watt, H-34265-8 H-33265-8 P07-A,

    Untitled

    Abstract: No abstract text available
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452FL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452FL 45-watt, H-34265-8 H-33265-8 P07-A,

    elna 50v

    Abstract: PTFA210701E PTFA210701F RO4350 BCP56 LM7805 resistor 51k
    Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210701E PTFA210701E 70-watt, H-30265-2 elna 50v PTFA210701F RO4350 BCP56 LM7805 resistor 51k

    200B

    Abstract: BCP56 LM7805 PTFA210451E infineon gold
    Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210451E PTFA210451E 45-watt, 200B BCP56 LM7805 infineon gold

    capacitor 203 1KV

    Abstract: PTFA210601E 200B BCP56 LM7805 infineon gold PD 550 L5
    Text: PTFA210601E Thermally-Enhanced High Power RF LDMOS FET 60 W, 2110 – 2170 MHz Description The PTFA210601E is a thermally-enhanced, 60-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210601E PTFA210601E 60-watt, capacitor 203 1KV 200B BCP56 LM7805 infineon gold PD 550 L5

    LM7805

    Abstract: H-30265-2 lm 2094
    Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210701E PTFA210701E 70-watt, H-30265-2 PTFA210701F* H-31265-2 LM7805 H-30265-2 lm 2094

    Untitled

    Abstract: No abstract text available
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at


    Original     		PDF PTFA210701E PTFA210701F

    GRM422Y5V106Z050AL

    Abstract: PTMA210452EL PTMA210452FL RO4350
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical


    Original     		PDF PTMA210452EL PTMA210452FL H-33265-8 PTMA210452EL PTMA210452FL 45-watt, H-34265-8 GRM422Y5V106Z050AL RO4350

    PTFA211801E

    Abstract: a211 BCP56 LM7805 PTFA211801F
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F PTFA211801E PTFA211801F 180-watt, a211 BCP56 LM7805

    marking us capacitor pf l1

    Abstract: BCP56 LM7805 PTFA210301E infineon gold
    Text: PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110


    Original     		PDF PTFA210301E PTFA210301E 30-watt, marking us capacitor pf l1 BCP56 LM7805 infineon gold

    a210701e

    Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PDF PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 a210701e 1K capacitor lm 2094 BCP56 LM7805 RO4350

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 180 Watts, 2110-2170 MHz PTF 102022* Description Key Features The PTF 102022 is a 180–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double-diffused push-pull FET, it operates with 13.5 dB linear gain. Full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PDF PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 214bstances.

    PTFA210701E

    Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PDF PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 BCP56 LM7805 RO4350 elna 50v lm 2094

    ptfa210601ev4

    Abstract: 103 1KV CERAMIC CAPACITOR BCP56 LM7805 PTFA210601E PTFA210601F
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input


    Original     		PDF PTFA210601E PTFA210601F PTFA210601E PTFA210601F 60-watt ptfa210601ev4 103 1KV CERAMIC CAPACITOR BCP56 LM7805

    Untitled

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input


    Original     		PDF PTFA210601E PTFA210601F PTFA210601E PTFA210601F 60-watt