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    IRF731 Price and Stock

    Infineon Technologies AG IRF7316TRPBF

    MOSFET 2P-CH 30V 4.9A 8SO
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    Infineon Technologies AG IRF7319TRPBF

    MOSFET N/P-CH 30V 8SO
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    Infineon Technologies AG IRF7317TRPBF

    MOSFET N/P-CH 20V 6.6A/5.3A 8SO
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    Infineon Technologies AG IRF7313TRPBFXTMA1

    MOSFET 2N-CH 30V 6.5A 8DSO-902
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    UMW IRF7311TR

    MOSFET 2N-CH 30V 6.5A 8SOP
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    IRF731 Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF731 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan PDF
    IRF731 FCI POWER MOSFETs Scan PDF
    IRF731 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF731 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF731 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    IRF731 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF731 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF731 Motorola European Master Selection Guide 1986 Scan PDF
    IRF731 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF731 Motorola Switchmode Datasheet Scan PDF
    IRF731 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF731 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF731 Unknown FET Data Book Scan PDF
    IRF731 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF731 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF731 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF731 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF731 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF731 National Semiconductor N-thannel Power MOSFETs Scan PDF
    IRF731 Samsung Electronics N-Channel Power MOSFETS Scan PDF

    IRF731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F7101

    Abstract: IRF7101 IRF7311 MS-012AA
    Text: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF 91435C IRF7311 F7101 IRF7101 IRF7311 MS-012AA

    IRF7317

    Abstract: MS-012AA
    Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V


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    PDF 1568B IRF7317 EIA-48 IA-541. IRF7317 MS-012AA

    f7101

    Abstract: IRF7316 91505B
    Text: PD - 9.1505B IRF7316 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF 1505B IRF7316 EIA-481 EIA-541. f7101 IRF7316 91505B

    Untitled

    Abstract: No abstract text available
    Text: PD - 95180 IRF7311PbF • Lead-Free www.irf.com 1 4/24/04 IRF7311PbF 2 www.irf.com IRF7311PbF www.irf.com 3 IRF7311PbF 4 www.irf.com IRF7311PbF www.irf.com 5 IRF7311PbF SO-8 Package Outline Dimensions are shown in milimeters inches D DIM B 5 A 6 8 7 6 5


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    PDF IRF7311PbF EIA-481 EIA-541.

    74a diode

    Abstract: No abstract text available
    Text: IRF7313QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


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    PDF IRF7313QPbF EIA-481 EIA-541. 74a diode

    Untitled

    Abstract: No abstract text available
    Text: IRF7313PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 0.029 Ω 22 Qg (typical) ID nC 6.5 (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 A SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original
    PDF IRF7313PbF-1 IRF7313TRPbF-1 D-020D

    HEXFET Power MOSFET P-Channel

    Abstract: IRF P CHANNEL MOSFET 10a HEXFET Power MOSFET HEXFET SO-8 IRF P CHANNEL MOSFET mosfet p-channel 10A irf
    Text: PD - 96107 IRF7314QPbF HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature


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    PDF IRF7314QPbF EIA-481 EIA-541. HEXFET Power MOSFET P-Channel IRF P CHANNEL MOSFET 10a HEXFET Power MOSFET HEXFET SO-8 IRF P CHANNEL MOSFET mosfet p-channel 10A irf

    IRF7319PBF

    Abstract: irf MOSFET p-CH
    Text: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description


    Original
    PDF IRF7319PbF and12 EIA-481 EIA-541. IRF7319PBF irf MOSFET p-CH

    IRF7316

    Abstract: D 304 x
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1505 IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1


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    PDF IRF7316 IRF7316 D 304 x

    top datasheet download 1505a

    Abstract: IRF7316
    Text: PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -30V RDS on = 0.058Ω T op V iew Description


    Original
    PDF IRF7316 top datasheet download 1505a IRF7316

    EIA-541

    Abstract: IRF7101
    Text: IRF7313PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original
    PDF IRF7313PbF EIA-481 EIA-541. EIA-541 IRF7101

    Untitled

    Abstract: No abstract text available
    Text: IRF7314QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original
    PDF IRF7314QPbF EIA-481 EIA-541.

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: IRF7316PbF-1 VDS RDS on max (@VGS = -10V) -30 V 0.058 Ω 23 nC -4.9 A Qg (typical) ID (@TA = 25°C) HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original
    PDF IRF7316PbF-1 IRF7316TRPbF-1 D-020D MOSFET IRF 380

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan
    PDF DD3711b T-39-01 CMD8

    1N MARKING

    Abstract: No abstract text available
    Text: International I O R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 JD I g 1n r 3T3D1 ss a t 3 D D2 G2 or a # 3 D D2 Vdss = 20 V Ros on = 0.029Î2


    OCR Scan
    PDF 1435B IRF7311 1N MARKING

    Untitled

    Abstract: No abstract text available
    Text: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan
    PDF IRF7313 muttiple-diEiA-481 EIA-541.

    Irf7314

    Abstract: No abstract text available
    Text: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan
    PDF 1436B IRF7314 Irf7314

    Untitled

    Abstract: No abstract text available
    Text: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier


    OCR Scan
    PDF 1435B IRF7311 char25 C-119

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1505A International I R Rectifier IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S IQ E ji-i / p T Voss = -30V RDS on = 0.058Q Top View Description


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    PDF IRF7316 DD2b234

    Untitled

    Abstract: No abstract text available
    Text: International IÖ R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power M OSFET Generation V Technology Ultra Low On-Reslstance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20V ^ D S o n = 0.029Î2 Description Fifth Generation HEXFETsfrom International Rectifier


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    PDF 1435B IRF7311

    RF730

    Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
    Text: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:


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    PDF IRF730, IRF731, IRF732, IRF733 50V-400V IRF732 IRF733 rf730 RF730 IRF730 IRF731 ISF730 JBF731

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1568A International I"R Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation H E X F E T sfro m International Rectifier


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    PDF IRF7317

    F0041

    Abstract: IRF7314
    Text: International IGR Rectifier PD - 9.1436A IRF7314 PRELIMINARY HEXFET Power M O SFET • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V DSS = -20V ^DS on = 0.0580 Description Fifth Generation HEXFETsfrom international Rectifier


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    PDF IRF7314 F0041 IRF7314

    IRF730

    Abstract: IRF731 IRF733 IRF732 K 3911 K 3911 mosfet
    Text: HE 0 I MÖ5S4S2 000053t, □ | Data Sheet No. PD-9.308J INTERNATIONAL RE CT IFIE R INTERNATIONAL RECTIFIER IOR T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* IRF730 IRF731 IRF732 IRF733 HEXFET TRAIMSISTOR5 N-CHANNEL 400 Volt, 1.0 Ohm HEXFET TO-220AB Plastic Package


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    PDF 000053t, T-39-11 IRF730 IRF731 IRF732 IRF733 O-220AB C-291 IRF730, IRF731, IRF733 K 3911 K 3911 mosfet