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    IRF9233 Search Results

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    IRF9233 Price and Stock

    Rochester Electronics LLC IRF9233

    MOSFET P-CH 150V 5.5A TO204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9233 Bulk 139
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.16
    • 10000 $2.16
    		Buy Now

    International Rectifier IRF9233

    5.5 A, 150 V, 1.2 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-204
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF9233 5
    • 1 $4.185
    • 10 $2.79
    • 100 $2.79
    • 1000 $2.79
    • 10000 $2.79
    		Buy Now
    Rochester Electronics IRF9233 301 1
    • 1 $2.08
    • 10 $2.08
    • 100 $1.96
    • 1000 $1.77
    • 10000 $1.77
    		Buy Now

    IRF9233 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9233 Intersil -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 ?, P-Channel Power MOSFETs Original PDF
    IRF9233 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9233 International Rectifier TO-3 N-Channel Scan PDF
    IRF9233 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9233 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9233 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9233 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9233 Unknown FET Data Book Scan PDF
    IRF9233 Samsung Electronics 150 V, P-channel power MOSFET Scan PDF
    IRF9233 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    IRF9233 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf9230

    Abstract: IRF9231 IRF9232 IRF9233 TB334
    Text: IRF9230, IRF9231, IRF9232, IRF9233 Semiconductor -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF9230, IRF9231, IRF9232, IRF9233 -150V -200V, -200V irf9230 IRF9231 IRF9232 IRF9233 TB334

    IRF9230

    Abstract: No abstract text available
    Text: IRF9230, IRF9231, IRF9232, IRF9233 S E M I C O N D U C T O R -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon


    Original     		PDF IRF9230, IRF9231, IRF9232, IRF9233 -150V -200V, TA17512. IRF9230

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2N6804

    Abstract: 2N6806 MIL-PRF19500 562C
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/562C 30 July 1999 SUPERSEDING MIL-S-19500/562B 7 January 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/562C MIL-S-19500/562B 2N6804 2N6806 2N6806 MIL-PRF19500 562C

    2N6804

    Abstract: 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/562E 26 August 2010 SUPERSEDING MIL-PRF-19500/562D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/562E MIL-PRF-19500/562D 2N6804 2N6806 MIL-PRF-19500. 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D

    F923

    Abstract: IRF9230 IRF9232 IRF9231 IRF9233 transistors bipolar
    Text: _ Rugged Power MOSFETs File Number IRF9230, IRF9231, IRF9232, IRF9233 2226 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -5.5 A and -6.5 A, -150 V and -200 V rDs on = 0.8 i l and 1.2 Cl D Features: • ■ ■ ■ • S ingle pulse avalanche e n ergy ra ted


    OCR Scan     		PDF IRF9230, IRF9231, IRF9232, IRF9233 IRF9232 IRF9233 92CS-4331I 92CS-43305 F923 IRF9230 IRF9231 transistors bipolar

    IRF9233

    Abstract: No abstract text available
    Text: IRF9230, IRF9231, IRF9232, IRF9233 HARRIS S E M I C O N D U C T O R -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon


    OCR Scan     		PDF IRF9230, IRF9231, IRF9232, IRF9233 -150V -200V, TA17512. RF9231, RF9232, IRF9233

    IRF9120

    Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
    Text: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150


    OCR Scan     		PDF 1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF9223 1RF9230 IRF9231 IRF9232 1RF9233 IRF9120 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523

    irf9630

    Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
    Text: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 IRF9630/IR FP9230/ IRF9230 IRF9631 /IRFP9231 IRF9231 IRF9632/IRFP9232/ irf9630 IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9632

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance


    OCR Scan     		PDF F9232, -150V -200V, IRF9230, IRF9231, RF9232, IRF9233 RF9231,

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    F9232

    Abstract: IRF9233 Irf9230
    Text: HE D I 4ÖSSM52 GOO^Et. 1 | Data Sheet No. PD-9.349D INTERNATIONAL R E C T I F I E R 1 -3 ? ^ f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFS230 IRF9S3Ì P-CHANIMEL 2 0 0 VOLT IRF9S3S POWER MOSFETs IRF9S33 -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET technology is the key to International Rectifier’s


    OCR Scan     		PDF SSM52 IRFS230 IRF9S33 G-208 F9232 IRF9233 Irf9230

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    RF432

    Abstract: IRF449 IRF460 IRFac32
    Text: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32


    OCR Scan     		PDF IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 RF432 IRF460 IRFac32

    1rf730

    Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
    Text: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)


    OCR Scan     		PDF 1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF833 IRF840 -220AB 1rf730 IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523

    IRF9120

    Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
    Text: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)


    OCR Scan     		PDF 1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB IRF9120 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    IRF448

    Abstract: IRF449 irf9243 IRFAG52 IRFAF30 irf420 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: THONSON/ DISTRIBUTOR SflE D • TD5t,fl73 DDDSflOfl T4b ■ TCSK W ggggg H EX FETw »«, — r c e c u iie r Hermetic Package l TO-3 N-Channel Part Number V p s Drain Source Voltage Volts IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452


    OCR Scan     		PDF IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 irf9243 IRFAG52 IRFAF30 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE

    1rf830

    Abstract: IRF9120 IRF9123 rf9220 IRF9122 1RF822 IRF9121 IRF831 1RF9140 IRF833
    Text: - 296 - f m £ M. * Vd s or € £ Vg s V Id Pd 11 Id s s Igss Vg s th) % W 4# D s (on; Vns= 1Í CTa=25*C) b(on) Ciss g fs Coss Crss (V) * /CH * /CH (A) <W) (nA) Vg s (V) (|ì A) Vd s (V) m in max CV) (V) ft m m % V g s =0 Vg s Vd g h f é (Ta=25^C) (max)


    OCR Scan     		PDF 1RF822 O-220 1RF823 1RF830 IRF831 IRF832 IRF833 IRF9120 IRF9123 rf9220 IRF9122 IRF9121 1RF9140

    F9232

    Abstract: No abstract text available
    Text: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE


    OCR Scan     		PDF F9231 F9233 92CS-4? 92CS-43305 F9232