IRFB9N30A Search Results

IRFB9N30A Price and Stock

Filter by Manufacturer


Vishay Siliconix IRFB9N30A MOSFET N-CH 300V 9.3A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFB9N30A	Tube			50	1 - 10 - 100 $1.155 1000 $1.155 10000 $1.155	Buy Now
Vishay Siliconix IRFB9N30APBF MOSFET N-CH 300V 9.3A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFB9N30APBF	Tube			50	1 - 10 - 100 $1.7524 1000 $1.7524 10000 $1.7524	Buy Now

IRFB9N30A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFB9N30A		International Rectifier	HEXFET Power Mosfet		Original	PDF
IRFB9N30A		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 9.3A TO-220AB		Original	PDF
IRFB9N30APBF		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRFB9N30APBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 9.3A TO-220AB		Original	PDF

IRFB9N30A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFB9N30A Abstract: SiHFB9N30A SiHFB9N30A-E3 Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT	Original	IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08 IRFB9N30A SiHFB9N30A-E3	PDF
Untitled Abstract: No abstract text available Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT	Original	IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08	PDF
IRFB9N30A Abstract: MJ4001 Text: PD- 91832 IRFB9N30A HEXFET Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer	Original	IRFB9N30A O-220 O-220AB IRFB9N30A MJ4001	PDF
Untitled Abstract: No abstract text available Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT	Original	IRFB9N30A, SiHFB9N30A O-220 O-220 12-Mar-07	PDF
marking 93A Abstract: No abstract text available Text: PD- 95350 IRFB9N30APbF HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleing Dynamic dv/dt Rated Simple Drive Requirements l Lead-Free D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer	Original	IRFB9N30APbF O-220 O-220AB. O-220AB marking 93A	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter	PDF
BUZ90af Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198	Original	O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l	PDF
IRF734 Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd g4pc50w IRGKI115U06 IRGTI200F06 gBC20f IRLIZ34 Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566	Original	FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd g4pc50w IRGKI115U06 IRGTI200F06 gBC20f IRLIZ34	PDF