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Vishay Siliconix IRFB9N30APBF MOSFET N-CH 300V 9.3A TO220AB
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DigiKey	IRFB9N30APBF	Tube			50	1 - 10 - 100 $1.7524 1000 $1.7524 10000 $1.7524	Buy Now

IRFB9N30APBF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFB9N30APBF		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRFB9N30APBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 9.3A TO-220AB		Original	PDF

IRFB9N30APBF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking 93A Abstract: No abstract text available Text: PD- 95350 IRFB9N30APbF HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleing Dynamic dv/dt Rated Simple Drive Requirements l Lead-Free D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer	Original	IRFB9N30APbF O-220 O-220AB. O-220AB marking 93A	PDF
IRFB9N30A Abstract: SiHFB9N30A SiHFB9N30A-E3 Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT	Original	IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08 IRFB9N30A SiHFB9N30A-E3	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter	PDF
Untitled Abstract: No abstract text available Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT	Original	IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT	Original	IRFB9N30A, SiHFB9N30A O-220 O-220 12-Mar-07	PDF