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Vishay Intertechnologies IRFC054B MOSFET N-CHANNEL 60V - Bulk (Alt: IRFC054B)
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Avnet Americas	IRFC054B	Bulk		13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
International Rectifier IRFC054 IR IRFC054 UNINSPECTED
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ES Components	IRFC054		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFC054D VIR IRFC054D
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ES Components	IRFC054D					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFC054B VIR IRFC054B DIE IN WAFER FORM
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ES Components	IRFC054B					1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFC054 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFC054R		International Rectifier	IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die		Scan	PDF

IRFC054 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 94766 IRFC054VB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer Sawn on Film G 60V RDS on = 9.0mΩ (max.) 6" Wafer S Electrical Characteristics (TO-247) Parameter V(BR)DSS RDS(on) VGS(th)	Original	PDF	IRFC054VB O-247) 100nA
IRFC054 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD239501 TECHNICAL DATA DATA SHEET 364, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.027 Ohm, 45A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to IRFC054 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.	Original	PDF	SHD239501 IRFC054 SHD239501 IRFC054
SHD239501 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD239501 TECHNICAL DATA DATA SHEET 364, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.027 Ohm, 45A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to IRFC054 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.	Original	PDF	SHD239501 IRFC054 340asheet SHD239501
IRFC430 Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440 Text: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0	OCR Scan	PDF	T0213AA STFJ120 STFJ130 STFJ140 STFJ220 STFK23Q STFJ240 STFJ320 STFJ330 STFJ340 IRFC430 irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
1RF520 Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent Text: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m\|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800	OCR Scan	PDF	IRFC420 IRFCC20 IRFCE20 IRFCF20 IRFCG20 1RFC034 IRFC120 IRFCG50 IRFCC40 IRFC460 1RF520 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
IRFZ44 equivalent Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30 Text: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214	OCR Scan	PDF	IRFC014 IRFC110 IRFC210 IRFC214 IRFC310 IRFC024 IRFC120 IRFC220 IRFC224 IRFC320 IRFZ44 equivalent IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
IRF1644 Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003 Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.	OCR Scan	PDF	100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
IRF540 n-channel MOSFET Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.	OCR Scan	PDF	QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
irf*234 n Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10 Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5	OCR Scan	PDF	4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
IRFC9130 Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430 Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	PDF	AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
IRFZ44 equivalent Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf234 n IRFCG50 IRFC034 Text: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450	OCR Scan	PDF	IRFK4H054 IRFK4H150 IRFK4H250 IRFK4H350 IRFK4H450 IRFK4HC50 IRFK4HE50 IRFK4J054 IRFK4J150 IRFK4J250 IRFZ44 equivalent IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
IRFBE40 Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034 Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800	OCR Scan	PDF	IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 IRFK3D150 IRFK3D250 IRFK3D350 IRFBE40 IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
irfc110 Abstract: IRFC9230 reco relay IRLC014 Text: AN-986 ESD Testing of MOS-Gated Power Transistors HEXFET is a tradem ark o f International Rectifier By Steve C lem en te Introduction A ll se m ic o n d u c to r c o m p o n e n ts have been proven to be static sensitive to v arying degrees. U s e r’s co n cern o n this	OCR Scan	PDF	AN-986 irfc110 IRFC9230 reco relay IRLC014
FL110 Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case	OCR Scan	PDF	OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc