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Vishay Siliconix IRFI520GPBF MOSFET N-CH 100V 7.2A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI520GPBF	Tube	919		1	1 $2.33 10 $2.33 100 $2.33 1000 $0.8128 10000 $0.8128	Buy Now
RS	IRFI520GPBF	Bulk			10	1 - 10 $1.21 100 $1.14 1000 $1.03 10000 $1.03	Get Quote
Infineon Technologies AG IRFI520N MOSFET N-CH 100V 7.6A TO220AB FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI520N	Tube			50	1 - 10 - 100 $1.715 1000 $1.715 10000 $1.715	Buy Now
Vishay Siliconix IRFI520G MOSFET N-CH 100V 7.2A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI520G	Tube			1,000	1 - 10 - 100 - 1000 $1.56965 10000 $1.56965	Buy Now
Vishay Intertechnologies IRFI520GPBF Trans MOSFET N-CH 100V 7.2A 3-Pin(3+Tab) TO-220 Full-Pak
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Arrow Electronics	IRFI520GPBF		10	18 Weeks	1	1 $0.3371 10 $0.3113 100 $0.2829 1000 $0.2745 10000 $0.2722	Buy Now
TME	IRFI520GPBF				1	1 $0.725 10 $0.557 100 $0.504 1000 $0.473 10000 $0.473	Get Quote
ComSIT USA	IRFI520GPBF		2,350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
International Rectifier IRFI520N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFI520N		414			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	IRFI520N		299			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFI520N		332			1 $6 10 $6 100 $3.7 1000 $3.3 10000 $3.3	Buy Now
	IRFI520N		331			1 $7.86 10 $7.86 100 $4.847 1000 $4.323 10000 $4.323	Buy Now
	IRFI520N		4			1 $3.6 10 $3 100 $3 1000 $3 10000 $3	Buy Now
ComSIT USA	IRFI520N		7,039			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IRFI520 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFI520A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFI520A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI520A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFI520G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI520G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7.2A TO220FP	Original	PDF
IRFI520G	International Rectifier	N-CHANNEL HEXFET Power MOSFET	Scan	PDF
IRFI520G	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFI520G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFI520G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFI520GPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7.2A TO220FP	Original	PDF
IRFI520N	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFI520N with Standard Packaging	Original	PDF
IRFI520N	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFI520N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI520N	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 7.2A, Pkg Iso TO-220 Fullpak	Scan	PDF

IRFI520NPBF	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFI520N with Lead Free Packaging	Original	PDF
IRFI520NPBF	International Rectifier		Original	PDF

IRFI520 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN609 Abstract: IRFI520G Text: IRFI520G_RC, SiHFI520G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFI520G SiHFI520G AN609, 20-Apr-10 AN609	PDF
Untitled Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI520G, SiHFI520G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI520G, SiHFI520G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
MOSFET IRF 630 Datasheet Abstract: 2F 1 marking IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v irf 630 datasheet IRF Power MOSFET code marking IRF520N TO-220 N-Channel HEXFET Power MOSFET transistor IRF 630 IRFI520N Text: PD - 9.1362 IRFI520N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V RDS on = 0.20Ω G Description ID = 7.2A	Original	IRFI520N O-220 MOSFET IRF 630 Datasheet 2F 1 marking IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v irf 630 datasheet IRF Power MOSFET code marking IRF520N TO-220 N-Channel HEXFET Power MOSFET transistor IRF 630 IRFI520N	PDF
IRF520N Abstract: 4.5V to 100V input regulator Text: PD - 95599 IRFI520NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.20Ω G Description Fifth Generation HEXFETs from International Rectifier	Original	IRFI520NPbF O-220 IRF520N 4.5V to 100V input regulator	PDF
IRF520N Abstract: IRFI520N 4.5v to 100v input regulator Text: PD - 9.1362A IRFI520N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 7.6A	Original	IRFI520N O-220 IRF520N IRFI520N 4.5v to 100v input regulator	PDF
IRFI520G Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI520G, SiHFI520G O-220 18-Jul-08 IRFI520G	PDF
IRF520N Abstract: 4.5V to 100V input regulator Text: PD - 95599 IRFI520NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.20Ω G Description Fifth Generation HEXFETs from International Rectifier	Original	IRFI520NPbF O-220 IRF520N 4.5V to 100V input regulator	PDF
Untitled Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI520G, SiHFI520G O-220 12-Mar-07	PDF
I840G Abstract: No abstract text available Text: PD- 95392 IRFI520GPbF Lead-Free www.irf.com 1 06/10/04 IRFI520GPbF 2 www.irf.com IRFI520GPbF www.irf.com 3 IRFI520GPbF 4 www.irf.com IRFI520GPbF www.irf.com 5 IRFI520GPbF 6 www.irf.com IRFI520GPbF www.irf.com 7 IRFI520GPbF TO-220 Full-Pak Package Outline	Original	IRFI520GPbF O-220 I840G	PDF
IRF520N Abstract: b 1370 IRFI520N 1505-80A 4.5V TO 100V INPUT REGULATOR Text: PD - 9.1362A IRFI520N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 7.6A	Original	IRFI520N O-220 IRF520N b 1370 IRFI520N 1505-80A 4.5V TO 100V INPUT REGULATOR	PDF
IRFI520G Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI520G, SiHFI520G O-220 18-Jul-08 IRFI520G	PDF
Untitled Abstract: No abstract text available Text: PD- 95392 IRFI520GPbF Lead-Free Document Number: 91143 06/10/04 www.vishay.com 1 IRFI520GPbF Document Number: 91143 www.vishay.com 2 IRFI520GPbF Document Number: 91143 www.vishay.com 3 IRFI520GPbF Document Number: 91143 www.vishay.com 4 IRFI520GPbF Document Number: 91143	Original	IRFI520GPbF O-220	PDF
IRFI520G Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI520G, SiHFI520G O-220 11-Mar-11 IRFI520G	PDF

Untitled Abstract: No abstract text available Text: PD- 95392 IRFI520GPbF Lead-Free Document Number: 91143 06/10/04 www.vishay.com 1 IRFI520GPbF Document Number: 91143 www.vishay.com 2 IRFI520GPbF Document Number: 91143 www.vishay.com 3 IRFI520GPbF Document Number: 91143 www.vishay.com 4 IRFI520GPbF Document Number: 91143	Original	IRFI520GPbF O-220	PDF
IRF520N Abstract: IRFI520N IRFI840G 4.5V TO 100V INPUT REGULATOR Text: Previous Datasheet Index Next Data Sheet PD - 9.1362 IRFI520N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V	Original	IRFI520N IRF520N IRFI520N IRFI840G 4.5V TO 100V INPUT REGULATOR	PDF
Untitled Abstract: No abstract text available Text: PD - 95599 IRFI520NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.20Ω G Description ID = 7.6A	Original	IRFI520NPbF O-220	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET	PDF
IRGKI165F06 Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)	Original	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1362A International IQ R Rectifier IRFI520N PRELIMINARY HEXFEr Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = "10 0 V	OCR Scan	IRFI520N O-220	PDF
IRFI520 Abstract: IRFI520G Text: International I S Rectifier PD-9.830 IRFI520G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance D V DSS= 1 0 0 V	OCR Scan	IRFI520G O-220 IRFI520 IRFI520G	PDF
IRF1520 Abstract: No abstract text available Text: • International rä« Rectifier 4flSS4S2 DOlSOfifi 077 « I N R p d -9.830 IRFI520G INTERNATIONAL RECTIFIER HEXFET Power M O SFET Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating	OCR Scan	IRFI520G T0-220 IRF1520	PDF
IRFI520G Abstract: No abstract text available Text: International S Rectifier PD-9.830 IRFI520G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance D V dss - 1 0 0 V	OCR Scan	IRFI520G O-220 IRFI520G	PDF

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IRFI520 Datasheets (16)

IRFI520 Datasheets Context Search

AN609

Untitled

Untitled

MOSFET IRF 630 Datasheet

IRF520N

IRF520N

IRFI520G

IRF520N

Untitled

I840G

IRF520N

IRFI520G

Untitled

IRFI520G

Untitled

IRF520N

Untitled

fqp60n06

sumida 94V-0

IRGKI165F06

Untitled

IRFI520

IRF1520

IRFI520G