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Infineon Technologies AG IRG4BC40W IGBT 600V 40A 160W TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG4BC40W	Tube			200	1 - 10 - 100 - 1000 $2.24805 10000 $2.24805	Buy Now
Infineon Technologies AG IRG4BC40U IGBT 600V 40A 160W TO220AB
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DigiKey	IRG4BC40U	Tube			200	1 - 10 - 100 - 1000 $2.16495 10000 $2.16495	Buy Now
Infineon Technologies AG IRG4BC40K IGBT 600V 42A 160W TO220AB
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DigiKey	IRG4BC40K	Tube			200	1 - 10 - 100 - 1000 $2.0575 10000 $2.0575	Buy Now
Infineon Technologies AG IRG4BC40W-S IGBT 600V 40A 160W D2PAK
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DigiKey	IRG4BC40W-S	Tube			50	1 - 10 - 100 $4.5672 1000 $4.5672 10000 $4.5672	Buy Now
Rochester Electronics LLC IRG4BC40UPBF IGBT 600V 40A TO220AB
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DigiKey	IRG4BC40UPBF	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRG4BC40 Datasheets (44)

Part	Manufacturer	Description	Datasheet Type	PDF
IRG4BC40	International Rectifier	Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V	Original	PDF
IRG4BC40F	International Rectifier	Fast Speed IGBT	Original	PDF
IRG4BC40F	International Rectifier	600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40F with Standard Packaging	Original	PDF
IRG4BC40F	International Rectifier	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4BC40FPBF	International Rectifier		Original	PDF
IRG4BC40FPBF	International Rectifier	600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC40F with Lead Free Packaging	Original	PDF
IRG4BC40K	International Rectifier	IGBT INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4BC40K	International Rectifier	600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40K with Standard Packaging	Original	PDF
IRG4BC40K	International Rectifier	Insulated Gate Bipolar Transistor	Original	PDF
IRG4BC40KPBF	International Rectifier	600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC40K with Lead Free Packaging	Original	PDF
IRG4BC40KPBF	International Rectifier		Original	PDF
IRG4BC40S	International Rectifier	600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; A IRG4BC40S with Standard Packaging	Original	PDF
IRG4BC40S	International Rectifier	Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4BC40S	International Rectifier	Insulated Gate Bipolar Transistor	Original	PDF

IRG4BC40SD	International Rectifier	Fit Rate / Equivalent Device Hours	Original	PDF
IRG4BC40SPBF	International Rectifier	600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; Similar to IRG4BC40S with Lead Free Packaging	Original	PDF
IRG4BC40SPBF	International Rectifier		Original	PDF
IRG4BC40U	International Rectifier	IGBT	Original	PDF
IRG4BC40U	International Rectifier	600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40U with Standard Packaging	Original	PDF
IRG4BC40U	International Rectifier	UltraFast Speed IGBT	Original	PDF

IRG4BC40 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter	Original	5429A IRG4BC40WPbF 150KHz 4BC40WPbF O-220AB	PDF
3000 0442 Abstract: No abstract text available Text: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	95788B IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. 3000 0442	PDF
IRG4BC40W Abstract: irg4bc40 354 GE Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE	PDF
IRG4BC40S Abstract: No abstract text available Text: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91455B IRG4BC40S O-220AB O-220AB V252-7105 IRG4BC40S	PDF
Untitled Abstract: No abstract text available Text: PD - 95788 IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC40WSPbF IRG4BC40WLPbF EIA-418.	PDF
Untitled Abstract: No abstract text available Text: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91455B IRG4BC40S O-220AB O-220AB	PDF
IRG4BC40K Abstract: No abstract text available Text: PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency	Original	IRG4BC40K O-247AC O-220AB IRG4BC40K	PDF
IRG4BC40S Abstract: TO-220AB IRG4BC40S Text: Previous Datasheet Index Next Data Sheet PD - 9.1455 IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	Original	IRG4BC40S O-220AB O-220AB IRG4BC40S TO-220AB IRG4BC40S	PDF
IRG4BC40F Abstract: No abstract text available Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91454B IRG4BC40F O-220AB O-220AB C252-7105 IRG4BC40F	PDF
irg4bc40 Abstract: IRG4BC40W Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1654A IRG4BC40W an52-7105 irg4bc40 IRG4BC40W	PDF
IRG4BC40U Abstract: No abstract text available Text: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91456E IRG4BC40U O-220AB O-220AB IRG4BC40U	PDF
f1010 Abstract: 555 triangular wave B-989 Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC40FPbF O-220AB O-220AB O-220AB. f1010 555 triangular wave B-989	PDF
Untitled Abstract: No abstract text available Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91454B IRG4BC40F O-220AB O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC40WS IRG4BC40WL EIA-418.	PDF

Untitled Abstract: No abstract text available Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter	Original	5429A IRG4BC40WPbF 150KHz O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	5788A IRG4BC40WSPbF IRG4BC40WLPbF EIA-418.	PDF
Untitled Abstract: No abstract text available Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC40FPbF O-220AB O-220AB O-220AB.	PDF
ic c 838 Abstract: IRG4BC40S Text: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91455B IRG4BC40S O-220AB O-220AB ic c 838 IRG4BC40S	PDF
Untitled Abstract: No abstract text available Text: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z	OCR Scan	IRG4BC40S	PDF
IOR 451 Abstract: No abstract text available Text: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	OCR Scan	IRG4BC40F T0-220AB IOR 451	PDF
J 420 G Abstract: No abstract text available Text: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies	OCR Scan	pd-9165 IRG4BC40W --600V J 420 G	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1654A International I«R Rectifier IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • D e sign ed e xp ressly fo r S w itch -M od e Pow er Vqes —600V S up ply and PFC pow er factor correction a p plicatio ns • Ind u stry-b e n ch m a rk sw itch ing losses im prove	OCR Scan	IRG4BC40W --600V	PDF
rectifier d 355 n 2000 Abstract: transistor iqr Text: International IOR Rectifier PD - 9.1592 IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >50 kHz , and Short Circuit Rated to 10ps @ 125°C, VGe = 15V	OCR Scan	IRG4BC40K O-247AC rectifier d 355 n 2000 transistor iqr	PDF
15 3cv sec Abstract: No abstract text available Text: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V	OCR Scan	IRG4BC40K O-247AC O-22C1AB 15 3cv sec	PDF

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IRG4BC40 Price and Stock

Infineon Technologies AG IRG4BC40W

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Rochester Electronics LLC IRG4BC40UPBF

IRG4BC40 Datasheets (44)

IRG4BC40 Datasheets Context Search

Untitled

3000 0442

IRG4BC40W

IRG4BC40S

Untitled

Untitled

IRG4BC40K

IRG4BC40S

IRG4BC40F

irg4bc40

IRG4BC40U

f1010

Untitled

Untitled

Untitled

Untitled

Untitled

ic c 838

Untitled

IOR 451

J 420 G

Untitled

rectifier d 355 n 2000

15 3cv sec