Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRGCC30UE Search Results

    IRGCC30UE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGCC30UE International Rectifier IGBT Original PDF

    IRGCC30UE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGBC30U

    Abstract: IRGCC30UE 91429
    Text: Previous Datasheet Index Next Data Sheet PD-9.1429 TARGET IRGCC30UE IRGCC30UE IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		PDF IRGCC30UE IRGCC30UE IRGBC30U IRGBC30U 91429

    IRGBC30U

    Abstract: IRGCC30UE
    Text: PD-9.1429 TARGET IRGCC30UE IRGCC30UE IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		PDF IRGCC30UE IRGCC30UE IRGBC30U IRGBC30U

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V


    OCR Scan     		PDF IRGCC30UE 250pA, 250pA