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    IS61LV6424 Search Results

    IS61LV6424 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS61LV6424 Integrated Circuit Solution Original PDF
    IS61LV6424-10 Integrated Circuit Solution Original PDF
    IS61LV6424-10TQ Integrated Circuit Solution 10ns 3.3V 64K x 24 high speed CMOS static RAM Original PDF
    IS61LV6424-10TQ Integrated Silicon Solution 64K x 24 high-speed CMOS static RAM with 3.3V supply Original PDF
    IS61LV6424-10TQI Integrated Silicon Solution 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF
    IS61LV6424-12TQ Integrated Circuit Solution 12ns 3.3V 64K x 24 high speed CMOS static RAM Original PDF
    IS61LV6424-12TQ Integrated Silicon Solution 64K x 24 high-speed CMOS static RAM with 3.3V supply Original PDF
    IS61LV6424-12TQI Integrated Silicon Solution 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF
    IS61LV6424-15TQ Integrated Circuit Solution 15ns 3.3V 64K x 24 high speed CMOS static RAM Original PDF
    IS61LV6424-15TQ Integrated Silicon Solution 64K x 24 high-speed CMOS static RAM with 3.3V supply Original PDF
    IS61LV6424-15TQI Integrated Silicon Solution 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF
    IS61LV6424-9TQ Integrated Circuit Solution 9ns 3.3V 64K x 24 high speed CMOS static RAM Original PDF
    IS61LV6424-9TQ Integrated Silicon Solution 64K x 24 high-speed CMOS static RAM with 3.3V supply Original PDF
    IS61LV6424-9TQI Integrated Silicon Solution 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF

    IS61LV6424 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS61LV6424

    Abstract: No abstract text available
    Text: ISSI IS61LV6424 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply


    Original     		PDF IS61LV6424 100-pin IS61LV6424 consu/19/00 IS61LV6424-9TQ IS61LV6424-9TQI IS61LV6424-10TQ IS61LV6424-10TQI IS61LV6424-12TQ

    S2103

    Abstract: S2104
    Text: IS61LV6424 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation — 594 mW max. operating @ 9 ns — 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply


    Original     		PDF IS61LV6424 100-pin IS61LV6424 dev10 AHSR012-0D S2-103 IS61LV6424-9TQ IS61LV6424-10TQ IS61LV6424-12TQ S2103 S2104

    IS61C256AH

    Abstract: No abstract text available
    Text: Org. 8K x 8 32K x 8 32K x 16 64K x 8 64K x 16 64K x 24 128K x 8 128K x 16 Part No. IS61C64AH IS61C64B IS61C256AH IS61LV256 1 IS62C256 IS62LV256(1) IS62LV256L(1) IS61C3216 IS61LV3216(1) IS61LV3216L(1) IS61C512 IS61C6416 IS61LV6416(1) IS61LV6424(1) IS61C1024


    Original     		PDF IS61C64AH IS61C64B IS61C256AH IS61LV256 IS62C256 IS62LV256 IS62LV256L IS61C3216 IS61LV3216 IS61LV3216L

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV6424 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply


    Original     		PDF IS61LV6424 100-pin IS61LV6424 SR016-0C IS61LV6424-9TQI IS61LV6424-10TQI IS61LV6424-12TQI IS61LV6424-15TQI IS61LV6424-9TQ

    IS61LV6424

    Abstract: No abstract text available
    Text: ISSI ISSI IS61LV6424 IS61LV6424 64K x 24 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 360 mW typical operating — 500 µW (typical) standby • TTL compatible interface levels


    Original     		PDF IS61LV6424 100-pin IS61LV6424 864-bit SR032-0B

    IS61LF51232-8

    Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
    Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML


    Original     		PDF IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML IS61DDB22M36-250M IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61LF51232-8 IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    IC61LV6416-10TG

    Abstract: GS74116AGP-10 GS71108AGJ-8 GS72116AGP-10 IC61LV5128-10KG GS71116AGJ-8 GS74116AGP-8 IC61LV12816-10BG QMR-224 GS72116AGP-12
    Text: ICSI Add "I" at the end of each part number GSI and ICSI IC61LV25616-10BG GS74116AGX-10 for Industrial Temperature, except for ICSI IC61LV25616-10K GS74116AJ-10 part numbers that are Lead Free. IC61LV25616-10KG GS74116AGJ-10 IC61LV25616-10T GS74116ATP-10


    Original     		PDF IC61LV25616-10BG GS74116AGX-10 IC61LV25616-10K GS74116AJ-10 IC61LV25616-10KG GS74116AGJ-10 IC61LV25616-10T GS74116ATP-10 IC61LV25616-10TG GS74116AGP-10 IC61LV6416-10TG GS74116AGP-10 GS71108AGJ-8 GS72116AGP-10 IC61LV5128-10KG GS71116AGJ-8 GS74116AGP-8 IC61LV12816-10BG QMR-224 GS72116AGP-12

    1K x 8 static ram

    Abstract: Static RAM 64K x 8 BIT DYNAMIC RAM 32K 4K x 8 Synchronous Dynamic RAM static ram 64K IS25M080A EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 rom 1K x 8 2Mbit EPROM flash memory 5V
    Text: www.issi.com IS22C011 IS22C012 IS22C020 IS22C040 IS22C111 IS23SC1604 IS23SC4418 IS23SC4428 IS24C01 IS24C01-3 IS24C02 IS24C02-3 IS24C04 IS24C04-3 IS24C16 IS24C16-3 IS24C64 IS24C64-3 IS25F011A-3V IS25F011A-5V IS25F021A-3V IS25F021A-5V IS25F041A-3V IS25F041A-5V


    Original     		PDF IS22C011 IS22C012 IS22C020 IS22C040 IS22C111 IS23SC1604 IS23SC4418 IS23SC4428 IS24C01 IS24C01-3 1K x 8 static ram Static RAM 64K x 8 BIT DYNAMIC RAM 32K 4K x 8 Synchronous Dynamic RAM static ram 64K IS25M080A EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 rom 1K x 8 2Mbit EPROM flash memory 5V

    roadmap ISSI

    Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
    Text: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990


    Original     		PDF IS22C020 IS22C040 IS22C041 IS22C042 IS82C600 roadmap ISSI IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI

    TSOP 28 SPI memory Package flash

    Abstract: IS61C256AH IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64
    Text: ISSI Celebrating Ten Years 1988 - 1998 Integrated Silicon Solution, Inc. 2231 Lawson Lane • Santa Clara, CA 95054 • 800-379-4774 • Fax: 408-588-0806 e-mail: [email protected] • Web: www.issi.com ISSI® Memory Based Solutions Integrated Silicon Solution, Inc.


    Original     		PDF 450-mil 300-mil 330-mil 600-mil TSOP 28 SPI memory Package flash IS61C256AH IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64

    IS61C256AH

    Abstract: IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64 IS62LV256
    Text: ISSI Celebrating Ten Years 1988 - 1998 Integrated Silicon Solution, Inc. 2231 Lawson Lane • Santa Clara, CA 95054 • 800-379-4774 • Fax: 408-588-0806 e-mail: [email protected] • Web: www.issi.com ISSI® Memory Based Solutions Integrated Silicon Solution, Inc.


    Original     		PDF 450-mil 300-mil 330-mil 600-mil IS61C256AH IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64 IS62LV256

    Untitled

    Abstract: No abstract text available
    Text: m IS61LV6424 64K x 24 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY i ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns The IS S IS61LV6424 is a high-speed, 1,572,864-bit static RAM organized as 65,536 words by 24 bits. It is fabricated


    OCR Scan     		PDF IS61LV6424 IIS61LV6424 864-bit I/023) 32-0A

    IS61LV6424

    Abstract: No abstract text available
    Text: M IS61LV6424 64K x 24 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • The I S S I IS61LV6424 is a high-speed, 1,572,864-bit static RAM organized as 65,536 words by 24 bits. It is fabricated


    OCR Scan     		PDF IS61LV6424 100-pin ISSIIS61LV6424 864-bit sr032-0a IS61LV6424

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV6424 64K x 24 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 360 mW typical operating — 500 [l\N (typical) standby • TTL compatible interface levels


    OCR Scan     		PDF IS61LV6424 100-pin IS61LV6424 864-bit SR032-0B

    Untitled

    Abstract: No abstract text available
    Text: IS61LV6424 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY p r e l im in a r y JULY 1999 FEATURES DESCRIPTION • High-speed access time: 9, 10, 12,15 ns • CMOS low power operation The lS S I IS61LV6424 is a high-speed, static RAM organized as 65,536 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process


    OCR Scan     		PDF IS61LV6424 IS61LV6424 IS61LV6424-9TQ IS61LV6424-9TQI IS61LV6424-10TQ IS61LV6424-10TQI IS61LV6424-12TQ IS61LV6424-12TQI IS61LV6424-15TQ