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    SOJ44 Price and Stock

    PRECI-DIP SSA SOJ440TLSMT

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    Quest Components SOJ440TLSMT 784
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    SOJ44 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOJ440-450T Advanced Interconnections 40 POS .400CTRS SOJ SOCKET Original PDF
    SOJ442-450T Advanced Interconnections 42 POS .400CTRS SOJ SOCKET Original PDF
    SOJ-442-H105-00 E-tec Interconnect Connector: SO-J Socket: SKT: 42: SMD Original PDF

    SOJ44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    44P0K

    Abstract: PRSJ0044DA-A
    Text: JEITA Package Code P-SOJ44-10.16x28.47-1.27 RENESAS Code PRSJ0044DA-A *1 Previous Code 44P0K MASS[Typ.] 1.7g c D HE *2 E e1 23 44 1 22 Index mark L b2 Reference Symbol A1 A *3 e y NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT


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    PDF P-SOJ44-10 16x28 PRSJ0044DA-A 44P0K 44P0K PRSJ0044DA-A

    44P0K

    Abstract: soj44 SOJ44-P-400-1
    Text: e y b 22 b1 Lead Material Alloy 42 1 Weight g 23 D JEDEC Code – 44 EIAJ Package Code SOJ44-P-400-1.27 L c SEATING PLANE HE 44P0K A E A1 b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8 –


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    PDF SOJ44-P-400-1 44P0K 44pin 400mil 44P0K soj44

    44P0K

    Abstract: SOJ44-P-400-1 ED44
    Text: 44P0K Plastic 44pin 400mil SOJ EIAJ Package Code SOJ44-P-400-1.27 Weight g JEDEC Code – Lead Material Alloy 42 b2 I1 I2 e D 44 e1 c 23 e1 HE E Recommended Mount Pad Symbol 1 22 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters


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    PDF 44P0K 44pin 400mil SOJ44-P-400-1 44P0K ED44

    H9723

    Abstract: h9740 l9718 L9712 L9709 L9727 T9934 l9731 L9706 l9735
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1998 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1998 TABLE OF CONTENTS Section I: Introduction Section II:


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    PDF 9808M 9806M 9807M H9723 h9740 l9718 L9712 L9709 L9727 T9934 l9731 L9706 l9735

    SOJ44-P-400-1

    Abstract: No abstract text available
    Text: TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-400-1

    CXK5B16120J

    Abstract: SOJ-44P-01
    Text: CXK5B16120J/TM -12 65536-word x 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this


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    PDF CXK5B16120J/TM 65536-word 16-bit CXK5B16120J 972mW 400mil 44pin CXK5B16120TM CXK5B16120J SOJ-44P-01

    64Kx8 CMOS RAM

    Abstract: static ram 64kx8 SOJ28 SOJ-28 W241024AJ-15 TSOP44 Package soj44 SOJ32 W241024
    Text: H I G H S P E E D C M O S S TAT I C R A M W24 AND W26 SERIES • 256K TO 1M HIGH SPEED STATIC RAM’S WITH ACCESS TIMES AS LOW AS 12ns HIGH SPEED CMOS STATIC RAM SPECIFICATIONS Part Number W24257AJ-12 W24257AQ-12 W24512AJ-15 W24512AT-15 W26010AJ-15 W26010AT-15


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    PDF W24257AJ-12 W24257AQ-12 W24512AJ-15 W24512AT-15 W26010AJ-15 W26010AT-15 W24011AJ-12 W241024AJ-15 W241024AT-15 W22010AJ-12 64Kx8 CMOS RAM static ram 64kx8 SOJ28 SOJ-28 TSOP44 Package soj44 SOJ32 W241024

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    260-pin

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


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    PDF TC55V1864J/FT-10/12/15 TheTC55V1864J/FT TC55V1864J/FT TC55V1864J/ B-143 260-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


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    PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55V-: 664J/FT TC55V1 B-135

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


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    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


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    PDF TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1864 J /FT -15 DATA SILICON GATE CMOS 65,536-WORD BY 18-BIT CMOS STATIC RAM DESCRIPTION The TC55V1864J/FT is a 1,179,648-bit high-speed static random access memory SRAM organized as 65,536


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    PDF TC55V1864 536-WORD 18-BIT TC55V1864J/FT 648-bit TC55V1864J/FTâ SOJ44-P-400)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as


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    PDF TC55V1664BJ/BFT-1Q 16-BIT TC55V1664BJ/BFT 10172M7 TC55V1664BJ/BFT-10

    TC55V16256J

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16256J/FT-12,-15 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 262,144-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


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    PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 TC55V16256J

    IJ09

    Abstract: SOJ44-P-400-1 A120T1
    Text: TO SH IBA TEN TATIVE TC55V1664BJI/BFTI-10,-12 TO SHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJI/BFTI is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


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    PDF TC55V1664BJI/BFTI-10 536-WORD 16-BIT TC55V1664BJI/BFTI SOJ44-P-4QO-1 44-P-400-0 IJ09 SOJ44-P-400-1 A120T1

    2SA614

    Abstract: 2SA616 2sc113 STC5204
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538

    D634 transistor

    Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 D634 transistor 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    SOJ44-P-400-1

    Abstract: TC55V16256FTI TC55V16256JI
    Text: TO SH IBA T C 5 5 V 16256J l/FTI-12#- 1 5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


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    PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC55V16256FTI TC55V16256JI

    TC55V16256J

    Abstract: No abstract text available
    Text: TO SHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


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    PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 TC55V16256J

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount SOJ Sockets ADVANCED INTERCONNECTIONS 5 Energy Way, P.0. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 • Email [email protected] • Internet http://www.advintcorp.com Surface Mount SOJ Sockets .050/ 1.27 Typ.


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