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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SA1415 / 2SC3645 Ordering number : EN1720B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V . Excellent linearity of hFE and small Cob.	Original	2SA1415 2SC3645 EN1720B 2SA1415 2SC3645/D	PDF
2SA1415 Abstract: 2SC3645 Text: 2SA1415 / 2SC3645 Ordering number : EN1720B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V .	Original	2SA1415 2SC3645 EN1720B 2SA1415 2SC3645	PDF
ic 4017 Abstract: 4017 ic DC 4017 IC 2SA1415 2SC3645 IC 4017 B ITR03510 Text: 2SA1415 / 2SC3645 注文コード No. N 1 7 2 0 B 三洋半導体データシート半導体ニューズ No.N1720A をさしかえてください。 2SA1415 / 2SC3645 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ高耐圧スイッチングプリドライバ用	Original	2SA1415 2SC3645 N1720A 2SA1415 250mm2 2SA1415AA, 2SC3645CA ic 4017 4017 ic DC 4017 IC 2SC3645 IC 4017 B ITR03510	PDF
2SC3645 Abstract: No abstract text available Text: Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET process. · High breakdown voltage VCEO=160V .	Original	ENN1720A 2SA1415/2SC3645 2SA1415/2SC3645] 25max 2SA1415 2SC3645	PDF