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    ITS60F06P Search Results

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    IGBT Pspice

    Abstract: No abstract text available
    Text: ITS60F06 ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-4.0 May 1999 The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    Original     		ITS60F06 DS4715-2 DS4715-4 ITS60F06 IGBT Pspice PDF

    transistor 80505

    Abstract: No abstract text available
    Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		junei997 DS4715-1 ITS60F06 ITS60F06 transistor 80505 PDF

    DS4715-2

    Abstract: pspice high frequency igbt ITS60F06P T0247 ITS60F06
    Text: M ITEL S E M IC O N D U C T O R ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-3.2 March 1999 Key Parameters The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		ITS60F06 DS4715-2 DS4715-3 ITS60F06 T0247 pspice high frequency igbt ITS60F06P T0247 PDF