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    IXFT20N80 Search Results

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    IXFT20N80 Price and Stock

    IXYS Corporation IXFT20N80P

    MOSFET N-CH 800V 20A TO268
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    DigiKey IXFT20N80P Tube 30
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    Mouser Electronics IXFT20N80P
    • 1 $8.03
    • 10 $6.89
    • 100 $6.25
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    Quest Components IXFT20N80P 12
    • 1 $22.455
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    TME IXFT20N80P 1
    • 1 $6.44
    • 10 $5.12
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    IXYS Corporation IXFT20N80Q

    MOSFET N-CH 800V 20A TO268
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    DigiKey IXFT20N80Q Tube
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    IXYS Integrated Circuits Division IXFT20N80Q

    MOSFET DIS.20A 800V N-CH TO268(D3PAK) HIPERFET SMT
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    Ozdisan Elektronik IXFT20N80Q
    • 1 $14.34228
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    • 100 $13.404
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    IXFT20N80 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT20N80P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 20A TO-268 Original PDF
    IXFT20N80Q IXYS 800V HiPerFET power MOSFET Q-class Original PDF

    IXFT20N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class VDSS = 800 V = 20 A ID25 RDS on = 0.42 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF O-247 O-268 O-264 IXFH20N80Q IXFK20N80Q IXFT20N80Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 IXFH20N80Q IXFT20N80Q O-268 728B1 123B1

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 IXFT20N80

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q
    Text: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 728B1 IXFH20N80Q IXFK20N80Q IXFT20N80Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800


    Original     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 728B1

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings


    OCR Scan     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50