IXSH35N135A Search Results

IXSH35N135A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSH35N135A		IXYS	1350V high speed IGBT		Original	PDF

IXSH35N135A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
35N140A Abstract: No abstract text available Text: High Voltage, High speed IGBT IXSH 35N140A IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C VCGR T J = 25°C to 150°C; RGE = 1 MW VGES VGEM 35N140A 35N135A 35N140A 35N135A 1400 1350 1400 1350 V V	Original	PDF	35N140A 35N135A 35N135A O-247 pack16
Untitled Abstract: No abstract text available Text: High Voltage, High speed IGBT IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1350 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1350 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90	Original	PDF	35N135A O-247
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original	PDF
IXSH35N135A Abstract: IXSH35N140A Text: High Voltage, High speed IGBT IXSH 35N140A IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; RGE = 1 MW 35N140A 35N135A 35N140A 35N135A 1400 1350 1400 1350 V V V V VGES Continuous	Original	PDF	35N140A 35N135A O-247 IXSH35N135A IXSH35N140A
T0263 Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247TI(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES	OCR Scan	PDF	T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
ixsh40n60a Abstract: No abstract text available Text: OIXYS Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Typ« V v«» «»c c - typ . Chip dlmecn io n * S ource $ b o n tfw fi* V V A PF 600 2.5 2.3 2 2,3 22 10 16 20 20 20 750 920 1800 2760 4500 300 310 500 400 400 1X32	OCR Scan	PDF	IXSD10N60 IXSD16N60 IXSD24N60 IXSD30N60 IXSD40N60 IXSD25N100 IXSD45N100 1XSD45N120 IXSD10N60A IXSD24N60A ixsh40n60a