igbt 500V 45A
Abstract: 45N100 ixsh45n100
Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM
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45N100
O-247
O-204
igbt 500V 45A
45N100
ixsh45n100
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20n60a40
Abstract: 20N60A 20N60 20N60A9 igbt 20n60
Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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O-247
O-204
O-204AE
20N60
20N60A
20N60U1
20N60AU1
20n60a40
20N60A9
igbt 20n60
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40N60
Abstract: G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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O-247
40N60
40N60A
O-204AE
40N60
G 40N60 igbt
40n60 igbt
40N60A
IC IGBT 40N60
g 40n60
N60A
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Untitled
Abstract: No abstract text available
Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM
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35N100A
O-247
O-204
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45N100
Abstract: ixsh45n100
Text: Low VCE sat IGBT IXSH/IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM
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45N100
O-247
O-204
O-204AE
45N100
ixsh45n100
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35n10
Abstract: No abstract text available
Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM
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35N100A
O-204
O-247
35n10
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM
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45N100
45N100
O-247
O-204
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ixsm
Abstract: 25N100 D-68623 25N100A N100
Text: VCES Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100A
O-247
D-68623
ixsm
25N100
25N100A
N100
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40n60 igbt
Abstract: 40n60 40N60A G 40N60 igbt 40n60 equivalent D-68623 igbt equivalent to 40n60
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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O-247
D-68623
40n60 igbt
40n60
40N60A
G 40N60 igbt
40n60 equivalent
igbt equivalent to 40n60
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30N60
Abstract: 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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O-247
30N60
30N60A
O-204AE
30N60
30N60A
igbt 30N60
N60A
IXYS 30N60
mos 30N60
30N60U1
A2760
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM
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45N100
O-247
O-204
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Untitled
Abstract: No abstract text available
Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM
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35N100A
35N100A
O-247
O-204
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35N100A
Abstract: 35N10
Text: High speed IGBT IXSH/IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient
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35N100A
O-247
O-204
O-204AE
35N100A
35N10
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.25N100
Abstract: 25N100 25N100A N100 25N10
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A VCES IC25 VCE(sat) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N100A
O-247
25N100
25N100A
O-204AE
.25N100
25N100
25N100A
N100
25N10
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Untitled
Abstract: No abstract text available
Text: □IXYS PRELIMINARY TECHNICAL INFORMATION Datasheet No 91550B July 1992 IXSH17N100,100A HIGH VOLTAGE "S" Series MOSIGBT Improved SCSOA Capability IXSM17N100,100A P a rt N u m b e r • Guaranteed Short Circuit SO A Capability
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91550B
IXSH17N100
IXSM17N100
O-247AD
D-6840
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TQ-204
Abstract: No abstract text available
Text: d i ’ High speed IGBT IXSH/IXSM 35N100A V CES = ^C25 = 70 A = 3.5 V v CE sat 1 0 0 0 V Short Circuit SO A Capability Symbol Test Conditions v CES v CGR v GES T, = 25='Cto150°C 1000 V T, = 25"C to 150°C; RGE = 1 M ii 1000 V Continuous ±20 V V«. Transient
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35N100A
Cto150
O-247
O-204
35N100A
TQ-204
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30n60
Abstract: 1XSH30N60A
Text: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V
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30N60
30N60A
30N60U1
30N60AU1
1XSH30N60A
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20N60AU
Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V
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O-247
T0-204AE
20N60AU
20N60A
g20n60
N60A
20N60
30 N60A
bt 151 600
20n60 G
LT0B
igbt 20n60
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25N100A
Abstract: No abstract text available
Text: nixYS Lo w Vce mi ig b t High Speed IGBT IXSH/IXSM25N100 IXSH/IXSM 25 N100A v* C E S ^C 25 vv C E (s a t) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Test Conditions Maximum Ratings VCES Tj - 25°C to 150°C 1000 V v CGR v GES v GEM T, = 25°C to 150°C; RGE = 1 MQ
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IXSH/IXSM25N100
N100A
O-247
O-204
2SN100
25N100A
25N100
25N100A
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Untitled
Abstract: No abstract text available
Text: nixYS Lo» IXSH/IXSM 45N100 IÛ B T VCES I = 1000 V = 75 A = 2.7 V C25 v CE sat Short Circuit SOA Capability Symbol Test Conditions v CES ^ = 25°C to 150°C 1000 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2 1000 V vy g e s Continuous +20 V VGEM T ransient ±30
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45N100
O-247
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Untitled
Abstract: No abstract text available
Text: IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A Low VCE sat IGBT1 v High Speed IGBT VC E S ^C 25 VC E (sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SO A Capability Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR ^ 600 V Maximum Ratings = 25°C to 150°C; RGE = 1 M£2
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O-247
40N60
40N60A
0D03bflfl
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Untitled
Abstract: No abstract text available
Text: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il
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N100A
25N100
25N1OOA
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Untitled
Abstract: No abstract text available
Text: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM
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35N100A
4bfib22t.
4bflb22b
00D3712
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60
30N60A
O-247
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