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IXYS Corporation IXSN35N120AU1 IGBT MOD 1200V 70A 300W SOT227B
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IXSN35N120AU1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSN35N120AU1		IXYS	IGBT Discretes		Original	PDF
IXSN35N120AU1		IXYS	IGBT, N-Channel IGBT, VCG 1200 V, VCE 1200 V, IC 70 A		Original	PDF

IXSN35N120AU1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXSN35N120AU1 Abstract: IXSN35N120AU IXSN35N120 35n120au1 Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A miniBLOC, SOT-227 B 1 2 VGES Continuous ±20 V	Original	PDF	35N120AU1 OT-227 IXSN35N120AU1 IXSN35N120AU IXSN35N120
50n50c Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60 Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
35N120AU1 Abstract: IXSN35N120 IXSN35N120AU1 Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	35N120AU1 IXSN35N120 IXSN35N120AU1
IXSN35N120 Abstract: No abstract text available Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings	OCR Scan	PDF	35N120AU1 OT-227 IXSN35N120AU1 4bflb22b IXSN35N120
diode u2 40 Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60 Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style ► N eiV ISOPLUS247™ (R) Case style	OCR Scan	PDF	O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60