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    IXTH1N250 Search Results

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    IXTH1N250 Price and Stock

    Littelfuse Inc IXTH1N250

    MOSFET N-CH 2500V 1.5A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH1N250 Tube 182 1
    • 1 $37.17
    • 10 $37.17
    • 100 $28.103
    • 1000 $28.103
    • 10000 $28.103
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    Verical IXTH1N250 234 2
    • 1 -
    • 10 $42.012
    • 100 $39.3545
    • 1000 $39.3545
    • 10000 $39.3545
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    Newark IXTH1N250 Bulk 290 1
    • 1 $36.43
    • 10 $31.98
    • 100 $27.54
    • 1000 $27.54
    • 10000 $27.54
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    Quest Components IXTH1N250 187
    • 1 $64.124
    • 10 $64.124
    • 100 $49.6961
    • 1000 $49.6961
    • 10000 $49.6961
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    IXYS Corporation IXTH1N250

    MOSFETs 1 Amps 2500V 40 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH1N250 172
    • 1 $37.17
    • 10 $37.16
    • 100 $28.1
    • 1000 $28.1
    • 10000 $28.1
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    Future Electronics IXTH1N250 Tube 300
    • 1 -
    • 10 -
    • 100 $27.84
    • 1000 $27.55
    • 10000 $27.55
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    TTI IXTH1N250 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $28.1
    • 10000 $28.1
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    IXYS Integrated Circuits Division IXTH1N250

    MOSFET N-CH 2500V 1.5A TO-247AD / N-Channel 2500 V 1.5A (Tc) Through Hole TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics IXTH1N250 1,108
    • 1 -
    • 10 $33.2751
    • 100 $29.8328
    • 1000 $29.8328
    • 10000 $29.8328
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    IXTH1N250 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH1N250 IXYS MOSFET N-CH 2500V 1.5A TO-247AD Original PDF
    IXTH1N250 IXYS MOSFET N-CH 2500V 1.5A TO-247AD Original PDF

    IXTH1N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH1N250

    Abstract: 1n250 diode
    Text: IXTH1N250 High Voltage Power MOSFET VDSS ID25 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS


    Original     		PDF IXTH1N250 O-247 100ms 100ms 1N250 10-25-10-D IXTH1N250 1n250 diode

    IXTH1N250

    Abstract: 1n250 diode T1N2 1N250
    Text: IXTH1N250 High Voltage Power MOSFET VDSS ID25 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH1N250 O-247 100ms 1N250 10-25-10-D IXTH1N250 1n250 diode T1N2 1N250

    IXTH1N250

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH1N250 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS


    Original     		PDF IXTH1N250 O-247 100ms 1N250 10-25-10-D IXTH1N250

    09 45 845 0001

    Abstract: T1N2 IXTH1N250 1N250 1n250 diode 200V TO-247
    Text: High Voltage Power MOSFET IXTH1N250 VDSS ID25 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS Continuous ±20 V VGSM Transient


    Original     		PDF IXTH1N250 O-247 500mA 1N250 9-08-A 09 45 845 0001 T1N2 IXTH1N250 1N250 1n250 diode 200V TO-247

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250