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Littelfuse Inc IXTN62N50L MOSFET N-CH 500V 62A SOT227B
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DigiKey	IXTN62N50L	Tube			1	1 $64.82 10 $54.754 100 $54.754 1000 $54.754 10000 $54.754	Buy Now
Newark	IXTN62N50L	Bulk			300	1 - 10 - 100 $57.39 1000 $57.39 10000 $57.39	Buy Now
IXYS Corporation IXTN62N50L MOSFET Modules 62 Amps 500V
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Mouser Electronics	IXTN62N50L					1 $72.21 10 $63.31 100 $56.93 1000 $56.93 10000 $56.93	Get Quote
Future Electronics	IXTN62N50L	Tube			300	1 - 10 $55.01 100 $53.68 1000 $53.68 10000 $53.68	Buy Now
	IXTN62N50L	Tube			300	1 - 10 $60.84 100 $59.37 1000 $59.37 10000 $59.37	Buy Now
Bristol Electronics	IXTN62N50L		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXTN62N50L		3			1 $87.856 10 $83.4632 100 $83.4632 1000 $83.4632 10000 $83.4632	Buy Now
TTI	IXTN62N50L	Tube			300	1 - 10 - 100 - 1000 $54.75 10000 $54.75	Buy Now

TME	IXTN62N50L				1	1 $69.09 10 $63.93 100 $63.07 1000 $63.07 10000 $63.07	Get Quote
IXYS Integrated Circuits Division IXTN62N50L MOSFET MOD.62A 500V N-CH SOT227B LINEAR CHASSIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTN62N50L					1 $101.78589 10 $95.127 100 $95.127 1000 $95.127 10000 $95.127	Get Quote

IXTN62N50L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTN62N50L		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 62A SOT-227		Original	PDF

IXTN62N50L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTN62N50L Abstract: siemens 30 Text: Preliminary Technical Information Linear Power MOSFET IXTN62N50L With Extended FBSOA VDSS ID25 D = 500 = 62 ≤ 0.1 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	IXTN62N50L OT-227 E153432 62N50L 5-07-A IXTN62N50L siemens 30
IXTN62N50L Abstract: No abstract text available Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	PDF	IXTN62N50L E153432 62N50L 11-04-11-B IXTN62N50L
IXTN62N50L Abstract: No abstract text available Text: LinearTM Power MOSFET w/Extended FBSOA IXTN62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	PDF	IXTN62N50L E153432 62N50L 11-04-11-B IXTN62N50L
IXAN0068 Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability	Original	PDF	IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L