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    IXYS Corporation IXUN350N10

    MOSFET N-CH 100V 350A SOT-227B
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    IXUN350N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXUN350N10 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 350A SOT-227B Original PDF

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    Abstract: No abstract text available
    Text: IXUN350N10 Trench Power MOSFET Very low RDS on VDSS = 100 V ID25 = 350 A RDS(on) typ. = 1.9 mΩ SOT-227 B, miniBLOC D KS G G KS S S D G = Gate, D = Drain, S = Source, KS = Kelvin Source Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF IXUN350N10 OT-227 IXUN35N10 20070926a

    ph-12 diode

    Abstract: IXUN350N10 mosfet base inverter with chargers circuit on509 MOSFET "MARKING CODE 7V" IXUN350N 60175a
    Text: IXUN350N10 Trench Power MOSFET Very low RDS on VDSS = 100 V ID25 = 350 A RDS(on) typ. = 1.9 mΩ SOT-227 B, miniBLOC D KS G G KS S S D G = Gate, D = Drain, S = Source, KS = Kelvin Source Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF IXUN350N10 OT-227 IXUN35N10 20070926a ph-12 diode IXUN350N10 mosfet base inverter with chargers circuit on509 MOSFET "MARKING CODE 7V" IXUN350N 60175a