Untitled
Abstract: No abstract text available
Text: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and
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APT45GR65BSCD10
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APT54GA60B
Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT54GA60BD30
APT54GA60SD30
APT54GA60B
APT54GA60BD30
APT54GA60SD30
MIC4452
SD30
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APT36GA60B
Abstract: APT36GA60S MIC4452 c 1853
Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT36GA60B
APT36GA60S
APT36GA60B
APT36GA60S
MIC4452
c 1853
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APT30GT60KR
Abstract: APT30GT60KRG
Text: TYPICAL PERFORMANCE CURVES APT30GT60KR G 600V APT30GT60KR APT30GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT30GT60KR
APT30GT60KR
APT30GT60KRG*
O-220
100KHz
APT30GT60KRG
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APT10035LLL
Abstract: APT100GT120JRDL
Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
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APT100GT120JRDL
E145592
APT10035LLL
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APT28GA60BD15
Abstract: APT6017LLL MIC4452
Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60BD15
APT6017LLL
MIC4452
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APT30GT60BRDL
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers
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APT30GT60BRDL
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APT28GA60K
Abstract: MIC4452
Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60K
O-220
shift26)
APT28GA60K
MIC4452
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SD15
Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT
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APT36GA60BD15
APT36GA60SD15
SD15
APT36GA60B
APT36GA60BD15
APT36GA60SD15
MIC4452
400v 20A ultra fast recovery diode
J750
1800g
TF328
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APT68GA60B
Abstract: APT68GA60S MIC4452
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT68GA60B
APT68GA60S
APT68GA60B
APT68GA60S
MIC4452
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4525 GE
Abstract: APT75GN60B APT75GN60BG MIC4452 silicon carbide
Text: APT75GN60B G 600V TYPICAL PERFORMANCE CURVES APT75GN60B APT75GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum
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APT75GN60B
APT75GN60B
APT75GN60BG*
4525 GE
APT75GN60BG
MIC4452
silicon carbide
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INFORMATION OF IC 7424
Abstract: APT75GP120B2
Text: APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT75GP120B2
INFORMATION OF IC 7424
APT75GP120B2
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APT10035LLL
Abstract: APT46GA90JD40 MIC4452 max4170
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
E145592
APT10035LLL
APT46GA90JD40
MIC4452
max4170
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Untitled
Abstract: No abstract text available
Text: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2R
APT50GT120LR
50KHz
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APT100DQ60
Abstract: APT100GT60LRG APT100GT60LR
Text: APT100GT60B2R G APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT100GT60B2R
APT100GT60LR
50KHz
O-247
APT100DQ60
APT100GT60LRG
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432F
Abstract: APT26GU30K APT26GU30SA
Text: APT26GU30K_SA APT26GU30K APT26GU30SA TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT TO-220 D2PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT26GU30K
APT26GU30K
APT26GU30SA
O-220
432F
APT26GU30SA
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APT25GP120B
Abstract: IC 7411 T0-247
Text: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,
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APT25GP120B
O-247
APT25GP120B
IC 7411
T0-247
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APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
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APTGU40TDU120P
Abstract: No abstract text available
Text: APTGU40TDU120P Triple Dual Common Source VCES = 1200V IC = 40A @ Tc = 80°C PT IGBT Power Module G1 G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTGU40TDU120P
200kHz
APTGU40TDU120P
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igbt 400V 40A
Abstract: APT40GU60JU3
Text: APT40GU60JU3 ISOTOP Buck chopper PT IGBT VCES = 600V IC = 40A @ Tc = 110°C C Application • AC and DC motor control · Switched Mode Power Supplies G E A A E Benefits · Outstanding performance at high frequency operation · Stable temperature behavior
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APT40GU60JU3
200kHz
OT-227)
igbt 400V 40A
APT40GU60JU3
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APTM100A18FT
Abstract: No abstract text available
Text: APTM100A18FT Phase leg MOSFET Power Module VBUS NT C2 Q1 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G2 S2 0/VBUS
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APTM100A18FT
APTM100A18FT
APTM100A18FT
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APT15GT60BRDQ1
Abstract: APT15GT60BRDQ1G APT6017LLL
Text: APT15GT60BRDQ1 G 600V TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1 APT15GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT15GT60BRDQ1
APT15GT60BRDQ1
APT15GT60BRDQ1G*
150KHz
APT15GT60BRDQ1G
APT6017LLL
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228F
Abstract: APT35GP120B T0-247
Text: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
228F
APT35GP120B
T0-247
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CR119
Abstract: APTGU40H60T3
Text: APTGU40H60T3 Full - Bridge PT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 CR3 CR1 19 Q2 22 7 23 8 CR2 26 Q3 11 Features • Power MOS 7 Punch Through PT IGBT
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APTGU40H60T3
200kHz
CR119
APTGU40H60T3
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