2030p1
Abstract: No abstract text available
Text: SC18_1999_.book : SC18_CHAPTER_5_1999 1 Wed May 12 11:40:55 1999 CHAPTER 5 THERMAL CONSIDERATIONS page Introduction 5-2 Part one: Thermal properties 5-2 Part two: Worked examples 5-7 Part three: Heat dissipation 5 - 15 SC18_1999_.book : SC18_CHAPTER_5_1999
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Untitled
Abstract: No abstract text available
Text: CHAPTER 5 THERMAL CONSIDERATIONS page Introduction 5-2 Part one: Thermal properties 5-2 Part two: Worked examples 5-7 Part three: Heat dissipation 5 - 15 Philips Semiconductors Discrete Semiconductor Packages Thermal considerations Chapter 5 INTRODUCTION The perfect power switch is not yet available. All power
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heatsink design
Abstract: pulse load calculation formula pulse load calculation formula for single pulse SC18
Text: DISCTETE SEMICONDUCTORS DATA SHEET Chapter 5 Thermal considerations Discrete Semiconductor Packages File under Disctete Semiconductors, SC18 July 1997 Philips Semiconductors Discrete Semiconductor Packages Thermal considerations Chapter 5 INTRODUCTION The perfect power switch is not yet available. All power
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1771-CJ
Abstract: ss100 transistor PLC-2 Communication cables pin diagram 178-442 DF1 PROTOCOL Allen-Bradley cvim 1784-T35 rack 1771-DA 6008-SI 2801-NC17
Text: ALLEN-BRADLEY Bulletin 5370 CVIM Configurable Vision Input Module Communications Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application,
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5370-ND002
1771-CJ
ss100 transistor
PLC-2 Communication cables pin diagram
178-442
DF1 PROTOCOL
Allen-Bradley cvim
1784-T35 rack
1771-DA
6008-SI
2801-NC17
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PBYR1045
Abstract: PBYR1645 PBYR2045CT PBYR2045CTB
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR2045CT, PBYR2045CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
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PBYR2045CT,
PBYR2045CTB
PBYR2045CT
OT404
PBYR1045
PBYR1645
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PHP45N03LT
Abstract: php45n03
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP45N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP45N03LT
O220AB)
PHP45N03LT
php45n03
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PHW80NQ10T
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW80NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 80 A
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PHW80NQ10T
OT429
PHW80NQ10T
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PSMN040-200W
Abstract: PSMN040200W
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A
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PSMN040-200W
OT429
PSMN040-200W
PSMN040200W
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PSMN020-150W
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN020-150W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 73 A
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PSMN020-150W
OT429
PSMN020-150W
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irf630
Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A
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IRF630,
IRF630S
IRF630
O220AB)
IRF630S
OT404
irf630 smd transistor
transistor IRF630
irf630 philips
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PSMN015-100B
Abstract: PSMN015-100P transistor 100p
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V
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PSMN015-100B,
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100B
OT404
transistor 100p
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PSMN015-100B
Abstract: PSMN015-100P SOT404
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V
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PSMN015-100B,
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100B
OT404
SOT404
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BYQ60EW
Abstract: 11175 116
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYQ60EW series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance
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BYQ60EW
OT429
11175 116
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BT136 motor
Abstract: BTA204 Series D 500D 500E 600D 600E 800E BTA204M BTA204S
Text: DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation
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BTA204S
BTA204M
OT428
BTA204S
135002/1160/03/pp8
BT136 motor
BTA204 Series D
500D
500E
600D
600E
800E
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SOT-227A
Abstract: BUV298 BUV298A BUV298AV BUV298V
Text: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.
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711002b
BUV298
BUV298A
SOT-227A
BUV298AV
BUV298V
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BUV298A
Abstract: BUV298 T227A
Text: I I P H I L IP S INTERNATIONAL 4SE D E3 7 1 1 0 0 2 b 0 0 3 1 1 3 7 3 E3PHIN BUV298 V BUV298A(V) T-33-/S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.
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BUV298
BUV298A
T-33-/S
OT227B
298AIV)
typ2500
T227A
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BUV98
Abstract: BUV98A BUV98AV BUV98V sot227a
Text: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.
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ABUV98
BUV98A
BUV98IV)
OT227B
BUV98V
BUV98
BUV98AV
sot227a
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB'lBl DQSflSDB MbB BUV98 V BUV98A(V) b^E » SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.
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BUV98
BUV98A
BUV98IV)
150stive
0G2A50?
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Rectifier diodes PBYR2045CT, PBYR2045CTB series Schottky SYMBOL FEATURES • • • • • QUICK REFERENCE DATA VR = 40 V/ 45 V Low forward volt drop
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PBYR2045CT,
PBYR2045CTB
PBYR2045CT
PB45CT,
T0220AB)
T0220)
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Untitled
Abstract: No abstract text available
Text: l N AUER PHIL IPS/DISCRETE 25E D ^ 5 3 1 3 1 00227b? 5 • BYW31 SERIES TZOZ - i 9 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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00227b?
BYW31
D022774
T-03-19
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance
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BYW31
Abstract: No abstract text available
Text: BYW31 SERIES 2 _s_ T ~ 0 3 r J . 9 . PHILIPS INTERNATIONAL 7 1 1 Q Ö E b 0 0 4 1 S 7 2 OOO « P H I N SbE » ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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BYW31
BYW31--50
004157e
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t0319
Abstract: m1532 BYW31 BYW31-50
Text: Ir AUER ESE P H IL IP S /D IS C R E T E D • 1^53=131 0G 227b7 5 ■ BYW31 SERIES 7 T Û 3 -¿ 9 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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0GS27b7
BYW31
DQ25773
T-03-19_
m1532
T-03-19
M1534
t0319
m1532
BYW31-50
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M1533
Abstract: m1532 M1527 TA 1319 AP BYW31-50 BYW31-50U BYW31
Text: BYW31 SERIES T P HILIPS IN T E R N A T I O N A L 711DÖEb 5bE D 004157E - 3 - L H PHIN OOO ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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BYW31
03-IH
711002b
M1533
m1532
M1527
TA 1319 AP
BYW31-50
BYW31-50U
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