k20N60hs
Abstract: k20n60
Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKW20N60HS
PG-TO-247-3-21
SKW20N60HS
k20N60hs
k20n60
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k20n60
Abstract: k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS
Text: SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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PDF
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SKW20N60HS
PG-TO-247-3
K20N60HS
k20n60
k20N60hs
RY 227 Tf 227 10A
PG-TO-247-3
igbt 400V 20A
SKW20N60HS
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k20N60hs
Abstract: K20N60 power Diode 400V 20A
Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKW20N60HS
PG-TO-247-3-21
SKW20N60HS
k20N60hs
K20N60
power Diode 400V 20A
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k20N60hs
Abstract: k20n60
Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKW20N60HS
PG-TO-247-3-1
Q67040-S4502
PG-TO-247-3-1
O-247AC)
SKW20N60HS
k20N60hs
k20n60
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k20N60hs
Abstract: k20n60
Text: SKW20N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKW20N60HS
PG-TO-247-3-1
Q67040-S4502
PG-TO-247-3-1
O-247AC)
SKW20N60HS
k20N60hs
k20n60
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