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Catalog Datasheet	MFG & Type	Document Tags	PDF
TK20X60U Abstract: No abstract text available Text: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20X60U TK20X60U	PDF
Untitled Abstract: No abstract text available Text: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20X60U	PDF
TK20X60U Abstract: No abstract text available Text: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20X60U TK20X60U	PDF
Untitled Abstract: No abstract text available Text: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20X60U	PDF
TK20X60U Abstract: K20X60U Text: K20X60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K20X60U ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)	Original	TK20X60U 833-c) TK20X60U K20X60U	PDF
Untitled Abstract: No abstract text available Text: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20X60U	PDF