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    K366 Search Results

    K366 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3664-T1-A Renesas Electronics Corporation Nch Single Power Mosfet 20V 0.5A 570Mohm Usm/Sc-75 Visit Renesas Electronics Corporation
    2SK3668-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SK3663-T1-A Renesas Electronics Corporation Nch Single Power Mosfet 20V 0.5A 570Mohm Ssp/Sc-70 Visit Renesas Electronics Corporation
    2SK3668-ZK-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3668-ZK-E2-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    SF Impression Pixel

    K366 Price and Stock

    Sanyo-Denki Co Ltd 109P0412K3663

    FAN AXL 40X28MM 12VDC RECT CONN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 109P0412K3663 Box 26 1
    • 1 $16.79
    • 10 $16.027
    • 100 $14.5008
    • 1000 $12.30661
    • 10000 $12.30661
    		Buy Now

    Transforming Technologies DK-TMK3660B

    36"X60"X0.08", LIGHT BLUE, 2 LAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DK-TMK3660B Box 5 1
    • 1 $176.4
    • 10 $163.627
    • 100 $156.794
    • 1000 $156.794
    • 10000 $156.794
    		Buy Now

    Transforming Technologies DK-TMK3660GY

    36"X60"X0.08", GREY, 2 LAYER ESD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DK-TMK3660GY Box 5 1
    • 1 $176.4
    • 10 $163.627
    • 100 $156.794
    • 1000 $156.794
    • 10000 $156.794
    		Buy Now

    Transforming Technologies DK-TMK3660GN

    36"X60"X0.08", GREEN, 2 LAYER ES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DK-TMK3660GN Box 5 1
    • 1 $176.4
    • 10 $163.627
    • 100 $156.794
    • 1000 $156.794
    • 10000 $156.794
    		Buy Now

    Transforming Technologies DK-TMK3660RB

    36"X60"X0.08", ROYAL BLUE, 2 LAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DK-TMK3660RB Box 4 1
    • 1 $176.4
    • 10 $163.627
    • 100 $156.794
    • 1000 $156.794
    • 10000 $156.794
    		Buy Now
    Find more K366 price and stock on Findchips.com

    K366 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K3661150A000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 66POS VERT 3.5MM Original PDF
    K3661250A000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 66POS VERT 3.5MM Original PDF
    K3661251A000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 66POS 90DEG 3.5MM Original PDF
    K3661351A000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 66POS 90DEG 3.5MM Original PDF

    K366 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k365

    Abstract: K366L K366G K366 JACK Gold RCA Jacks K366E K366M rca jacks transistor K366
    Text: RCA Phono Jack K365 CHASSIS MOUNT PHONO JACK K366J RCA PHONO JACK COLOR : RED, BLACK, YELLOW, GREEN, BLUE, WHITE K365A K366L RCA PHONO JACK RCA PHONO JACK K366 K366M RCA PHONO JACK RCA PHONO JACK COLOR : RED, BLACK, YELLOW, GREEN, BLUE, WHITE K366A RCA PHONO JACK


    Original     		PDF K366J K365A K366L K366M K366A K366N K366D K366S K366E K366T k365 K366L K366G K366 JACK Gold RCA Jacks K366E K366M rca jacks transistor K366

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667

    K3662

    Abstract: 2SK3662
    Text: K3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII K3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		PDF 2SK3662 K3662 2SK3662

    K3669

    Abstract: 2SK3669
    Text: K3669 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSVII K3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。 : |Yfs| = 6 S (標準)


    Original     		PDF 2SK3669 K3669 2SK3669

    K3662

    Abstract: K366 2SK3662
    Text: K3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII K3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		PDF 2SK3662 K3662 K366 2SK3662

    Untitled

    Abstract: No abstract text available
    Text: K3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII K3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		PDF 2SK3662

    toshiba k3667

    Abstract: K3667 ALL k3667 K366 2SK3667
    Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667

    K3669

    Abstract: 2SK3669 MJ1005
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669 2SK3669 MJ1005

    membrane switch

    Abstract: mw 137 k276 BMW ABS countersunk screw membrane key sm phillips K2750
    Text: NEXT FIND IT Keyboard enclosures are ergonomically designed and available in a wide range of styles and sizes. You may choose from types with standard or slanted designs, as well as from types that have membrane switches, cutouts for ribbon cables and 9V battery


    Original     		PDF K4-550SM K4-660SM K4-770SM K4-550SMW K4-660SMW K4-770SMW membrane switch mw 137 k276 BMW ABS countersunk screw membrane key sm phillips K2750

    K3667

    Abstract: 2SK3667 K366 2-10U1B
    Text: K3667 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3667 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		PDF 2SK3667 SC-67 2-10U1B K3667 2SK3667 K366 2-10U1B

    K3669

    Abstract: K366 2SK3669
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669 K366 2SK3669

    K3662

    Abstract: 2SK3662 as58
    Text: K3662 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII K3662 ○ スイッチングレギュレータ用 ○ DC-DC コンバータモータドライブ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 55 S (標準)


    Original     		PDF 2SK3662 SC-67 2-10R1B K3662 2SK3662 as58

    K3667

    Abstract: 2SK3667 S12C toshiba k3667
    Text: K3667 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3667 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		PDF 2SK3667 SC-67 2-10U1B K3667 2SK3667 S12C toshiba k3667

    K366

    Abstract: K3669 2SK3669
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)


    Original     		PDF 2SK3669 K366 K3669 2SK3669

    rsn 309 w 44

    Abstract: No abstract text available
    Text: MAX20751 Multiphase Master with PMBus Interface and Internal Buck Converter General Description The MAX20751 PMBus -compliant multiphase master IC, with extensive status and parameter monitoring, is capable of driving up to four smart-slave integrated power devices.


    Original     		PDF MAX20751 MAX20751 rsn 309 w 44

    2SK3669

    Abstract: K3669 MJ1005
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)


    Original     		PDF 2SK3669 2SK3669 K3669 MJ1005

    K3669

    Abstract: No abstract text available
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669

    Untitled

    Abstract: No abstract text available
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669

    toshiba k3667

    Abstract: K3667 ALL k3667 2SK3667
    Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667

    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667

    K3662

    Abstract: K366 2SK3662
    Text: K3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII K3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		PDF 2SK3662 K3662 K366 2SK3662

    K3667

    Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
    Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    K3662

    Abstract: 2SK3662
    Text: K3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII K3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		PDF 2SK3662 K3662 2SK3662