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Vishay Intertechnologies CRCW060333R2FKEA Thick Film Resistors - SMD 1/10watt 33.2ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW060333R2FKEA	Reel	3,400,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00356	Buy Now
Vishay Intertechnologies SMBG170CA-E3/5B ESD Protection Diodes / TVS Diodes 600W 170V 5% Bidir
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SMBG170CA-E3/5B	Reel			3,200	1 - 10 - 100 - 1000 - 10000 $0.377	Buy Now
Dialight 5680004803F LED Circuit Board Indicators 3mm CBI
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TTI	5680004803F	Bulk			350	1 - 10 - 100 - 1000 $1.89 10000 $1.89	Buy Now
Littelfuse Inc 39018R2C2.75 Specialty Fuses V A Limiting 2.75kV
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TTI	39018R2C2.75	Box			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K3863 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K3863 Abstract: 2SK3863 2SK386 K386 Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3863 K3863 2SK3863 2SK386 K386	PDF
k3863 Abstract: K386 2SK3863 Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3863 k3863 K386 2SK3863	PDF
K3863 Abstract: K386 2SK3863 Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3863 K3863 K386 2SK3863	PDF
K3863 Abstract: 2SK3863 Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8S (typ.)	Original	2SK3863 K3863 2SK3863	PDF
k3863 Abstract: 2SK3863 Text: K3863 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3863 単位: mm ○ スイッチングレギュレータ用 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 1.35 Ω (標準) 5.5 ± 0.2 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3863 k3863 2SK3863	PDF
k386 Abstract: k3863 Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3863 k386 k3863	PDF