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Vishay Intertechnologies WSC45275R000FEA Wirewound Resistors - SMD 2watts 5ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	WSC45275R000FEA	Reel	13,200		1,200	1 - 10 - 100 - 1000 - 10000 $0.501	Buy Now
Amphenol Corporation 91-541123-35P Circular MIL Spec Connector JT 100C 100#22D PIN WALL RECP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	91-541123-35P	Each	184		1	1 $84.88 10 $68.14 100 $57.66 1000 $57.66 10000 $57.66	Buy Now
Vishay Intertechnologies SMBG18A-E3/5B ESD Protection Diodes / TVS Diodes 600W 18V 5% Uni
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SMBG18A-E3/5B	Reel			3,200	1 - 10 - 100 - 1000 - 10000 $0.325	Buy Now
Dialight 5680004806F LED Circuit Board Indicators 3mm CBI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	5680004806F	Bulk			350	1 - 10 - 100 - 1000 $1.89 10000 $1.89	Buy Now
Vishay Intertechnologies CW02C1K000JE70 Wirewound Resistors - Through Hole 1K OHM 5% 2.5W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CW02C1K000JE70	Reel			1,000	1 - 10 - 100 - 1000 $0.511 10000 $0.511	Buy Now

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K3869 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k3869 Abstract: 2SK3869 K386 Text: K3869 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3869 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5 S (標準)	Original	2SK3869 SC-67 2-10U1B 100us* k3869 2SK3869 K386	PDF
Toshiba K3869 Abstract: K3869 Transistor K3869 2SK3869 Text: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3869 Toshiba K3869 K3869 Transistor K3869 2SK3869	PDF
k3869 Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869 Text: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3869 k3869 Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869	PDF
K3869 Transistor Abstract: Toshiba K3869 2SK3667,2SK3869,K3869, Text: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3869 K3869 Transistor Toshiba K3869 2SK3667,2SK3869,K3869,	PDF
K3869 Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386 Text: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3869 K3869 Toshiba K3869 K3869 Transistor 2SK3869 k386	PDF
K3869 Abstract: K3869 Transistor Toshiba K3869 2SK3869 Text: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3869 K3869 K3869 Transistor Toshiba K3869 2SK3869	PDF