K4E160412C
Abstract: No abstract text available
Text: K4E170411C, K4E160411C K4E170412C, K4E160412C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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K4E170411C,
K4E160411C
K4E170412C,
K4E160412C
adva160412C
300mil
K4E160412C
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PDF
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K4E160411D
Abstract: K4E160411D-B K4E160412D K4E160412D-B K4E170411D K4E170411D-B K4E170412D K4E170412D-B 304X4
Text: K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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Original
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K4E170411D,
K4E160411D
K4E170412D,
K4E160412D
advan160412D
300mil
K4E160411D
K4E160411D-B
K4E160412D
K4E160412D-B
K4E170411D
K4E170411D-B
K4E170412D
K4E170412D-B
304X4
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PDF
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TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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PDF
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4Mx32bits
Abstract: No abstract text available
Text: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C
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M53230400CW0/CB0
M53230410CW0/CB0
M53230410CW0/CB0
M5323040
4Mx32bits
24-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM
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M53640400DW0/DB0
M53640410DW0/DB0
M53640400DW0/DB0
M53640410DW0/DB0
M5364040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C
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M53640400CW0/CB0
M53640410CW0/CB0
M53640410CW0/CB0
M5364040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D
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M53230800DW0/DB0
M53230810DW0/DB0
M5323080
8Mx32bits
24-pin
72-pin
M53230800DW0/DB0
M53230810DW0/DB0
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53230400DW0/DB0 M53230410DW0/DB0 DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D
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Original
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M53230400DW0/DB0
M53230410DW0/DB0
M5323040
4Mx32bits
24-pin
72-pin
M53230400DW0/DB0
M53230410DW0/DB0
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PDF
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Untitled
Abstract: No abstract text available
Text: M53230400DW0/DB0 M53230410DW0/DB0 DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D
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Original
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M53230400DW0/DB0
M53230410DW0/DB0
M53230410DW0/DB0
M5323040
4Mx32bits
24-pin
72-pin
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PDF
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64mb edo dram simm
Abstract: K4E160411C
Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C
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M53640412CW0/CB0
M53640412CW0/CB0
M53640412C
4Mx36bits
M53640412C
24-pin
28-pin
72-pin
M53640412CW0
64mb edo dram simm
K4E160411C
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PDF
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Untitled
Abstract: No abstract text available
Text: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D
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Original
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M53230800DW0/DB0
M53230810DW0/DB0
M53230810DW0/DB0
M5323080
8Mx32bits
24-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D
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Original
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M53230800DW0/DB0
M53230810DW0/DB0
M53230800DW0/DB0
M53230810DW0/DB0
M5323080
8Mx32bits
24-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D
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M53640800DW0/DB0
M53640810DW0/DB0
M53640800DW0/DB0
M53640810DW0/DB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C
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M53640812CW0/CB0
M53640812CW0/CB0
M53640812C
8Mx36bits
M53640812C
24-pin
28-pin
72-pin
M53640812CW0
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PDF
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Untitled
Abstract: No abstract text available
Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D
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Original
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M53640800DW0/DB0
M53640810DW0/DB0
M53640810DW0/DB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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DQ9-DQ12
Abstract: No abstract text available
Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C
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Original
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M53640800CW0/CB0
M53640810CW0/CB0
M53640810CW0/CB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
DQ9-DQ12
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PDF
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