K4E160411C Search Results

K4E160411C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4E160411C-B-50		Samsung Electronics	4M x 4-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF

K4E160411C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4E160412C Abstract: No abstract text available Text: K4E170411C, K4E160411C K4E170412C, K4E160412C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K	Original	PDF	K4E170411C, K4E160411C K4E170412C, K4E160412C adva160412C 300mil K4E160412C
4Mx32bits Abstract: No abstract text available Text: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C	Original	PDF	M53230400CW0/CB0 M53230410CW0/CB0 M53230410CW0/CB0 M5323040 4Mx32bits 24-pin 72-pin
Untitled Abstract: No abstract text available Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C	Original	PDF	M53640400CW0/CB0 M53640410CW0/CB0 M53640410CW0/CB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin
64mb edo dram simm Abstract: K4E160411C Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C	Original	PDF	M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C
Untitled Abstract: No abstract text available Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C	Original	PDF	M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0
Untitled Abstract: No abstract text available Text: M53230800CW0/CB0 M53230810CW0/CB0 DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C	Original	PDF	M53230800CW0/CB0 M53230810CW0/CB0 M53230810CW0/CB0 M5323080 8Mx32bits 24-pin 72-pin
DQ9-DQ12 Abstract: No abstract text available Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C	Original	PDF	M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12