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    Samsung Semiconductor K4H511638BTCB0

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    Samsung Semiconductor K4H511638B-TCB3

    IC,SDRAM,DDR,4X8MX16,CMOS,TSSOP,66PIN,PLASTIC
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    K4H511638B Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4H511638B Samsung Electronics K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16), Organization = 32Mx16, Bank/ Interface = 4B/SSTL2, Refresh = 8K/64ms, Speed = CC,C4,B3,AA,A2,B0, Package = 66TSOP2,60FBGA, Power = C,l, Production Status = Customer Sample(Q3 03), Comments = DDR266/333/400 Original PDF
    K4H511638B-GC/LCC Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-TC/LA2 Samsung Electronics 512Mb B-die DDR SDRAM Original PDF
    K4H511638B-TC/LA2 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-TC/LB0 Samsung Electronics 512Mb B-die DDR SDRAM Original PDF
    K4H511638B-TC/LB0 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-TC/LB3 Samsung Electronics 512Mb B-die DDR SDRAM Original PDF
    K4H511638B-UC/LA2 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-UC/LB0 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-UC/LB3 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-UC/LCC Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-ZC/LA2 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-ZC/LB0 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-ZC/LB3 Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF
    K4H511638B-ZC/LCC Samsung Electronics 512Mb B-die DDR SDRAM Specification Original PDF

    K4H511638B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDR266

    Abstract: DDR333
    Text: SERIAL PRESENCE DETECT M470L6524BT0-CB0/CA2/CB3 Organization :64M x 64 Composition :32M x 16 * 8ea Used component part # :K4H511638B-TCB0/A2/B3 # of rows in module:2 Rows # of banks in component :4 banks Feature :1250mil height & double sided Refresh :8K/64ms


    Original     		PDF M470L6524BT0-CB0/CA2/CB3 K4H511638B-TCB0/A2/B3 1250mil 8K/64ms DDR266 DDR333 128bytes

    K4H511638B-TCCC

    Abstract: K4H510838B-TCCC DDR333 DDR400 K4H511638B-T
    Text: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.0 Rev. 1.0 June 2003 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics


    Original     		PDF 512Mb DDR400 200MHz 400Mbps K4H511638B-TCCC K4H510838B-TCCC DDR333 K4H511638B-T

    ddr266

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification Revision 1.1 Rev. 1.1 August 2003 DDR SDRAM 512Mb B-die (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review


    Original     		PDF 512Mb K4H511632B ddr266

    LC4064ZE

    Abstract: BSDL Files infineon LFXP6C-3FN256I "x-ray machine" K4H560838E LC4064 LC4256ZE LFXP10C-3F256I LFxP3C-3TN144C PCI x1 express PCB dimensions artwork
    Text: LatticeXP Family Handbook HB1001 Version 03.4, September 2010 LatticeXP Family Handbook Table of Contents September 2010 Section I. LatticeXP Family Data Sheet Introduction Features . 1-1


    Original     		PDF HB1001 TN1050 TN1049 TN1082 TN1074 LC4064ZE BSDL Files infineon LFXP6C-3FN256I "x-ray machine" K4H560838E LC4064 LC4256ZE LFXP10C-3F256I LFxP3C-3TN144C PCI x1 express PCB dimensions artwork

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification 60Ball FBGA Revision 1.1 Rev. 1.1 May. 2004 DDR SDRAM 512Mb B-die (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (September, 2003) - First version for internal review


    Original     		PDF 512Mb 60Ball

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die with 64 / 72-bit Non ECC / ECC Revision 1.4 March. 2004 Rev. 1.4 March 2004 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM Revision History Revision 1.0 (Feb, 2003)


    Original     		PDF 256MB, 512MB, 200pin 512Mb 72-bit

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die with 64 / 72-bit Non ECC / ECC 66 TSOP(II)/54 sTSOP(II) with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free


    Original     		PDF 256MB, 512MB, 200pin 512Mb 72-bit

    Untitled

    Abstract: No abstract text available
    Text: LatticeECP/EC Family Handbook HB1000 Version 03.7, September 2012 LatticeECP/EC Family Handbook Table of Contents September 2012 Section I. LatticeECP/EC Family Data Sheet Introduction Features . 1-1


    Original     		PDF HB1000 TN1008 TN1010 TN1018 TN1071 TN1074 TN1078

    Untitled

    Abstract: No abstract text available
    Text: 19-4750; Rev 1; 7/11 DS34S132 32-Port TDM-over-Packet IC General Description The IETF PWE3 SAToP/CESoPSN/HDLC-compliant DS34S132 provides the interworking functions that are required for translating TDM data streams into and out of TDM-over-Packet TDMoP data streams


    Original     		PDF DS34S132 32-Port DS34S132 100/1000Mbps 64Kbps 048Mbps

    foxconn

    Abstract: Y27 sot23 zener FW82801FBM Mobile Dothan alviso-GM Socket AM2 Compal Electronics LA-2592 APW7057 ls-2597
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Dothan uFCPGA with Intel Alviso_GM+ICH6-M core logic 2005-04-10 3 3 LA-2592 REV:3A 4 4 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF LA-2592 LA-2592 PR143 foxconn Y27 sot23 zener FW82801FBM Mobile Dothan alviso-GM Socket AM2 Compal Electronics APW7057 ls-2597

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered DIMM Pb-Free DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit ECC/Non ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.1 Oct. 2004 Revision 1.1 Oct. 2004 256MB, 512MB, 1GB Unbuffered DIMM Pb-Free


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64/72-bit

    Catalog Toshiba

    Abstract: st smd diode marking code G11 laser diode head toshiba semiconductor general catalog
    Text: LatticeECP/EC Family Handbook HB1000 Version 03.3, March 2010 LatticeECP/EC Family Handbook Table of Contents March 2010 Section I. LatticeECP/EC Family Data Sheet Introduction Features . 1-1


    Original     		PDF HB1000 TN1052 TN1074 Catalog Toshiba st smd diode marking code G11 laser diode head toshiba semiconductor general catalog

    LFXP15E

    Abstract: handbook motorola IPC J-STD-012
    Text: LatticeXP Family Handbook Version 01.6, September 2005 LatticeXP Family Handbook Table of Contents September 2005 Section I. LatticeXP Family Data Sheet Introduction Features . 1-1


    Original     		PDF 1-800-LATTICE LFXP15E handbook motorola IPC J-STD-012

    DDR400

    Abstract: K4H511638B M470L3324BT
    Text: 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die 66 TSOP-II & 54 sTSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64Mx8 sTSOPII-300mil K4H510838B DDR400 K4H511638B M470L3324BT

    K4H511638B

    Abstract: k4h510438b-tc
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 512Mb B-die (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review


    Original     		PDF 512Mb K4H511638B Differential65 k4h510438b-tc

    sdram pcb layout guide

    Abstract: vhdl code for sdr sdram controller memory Controller FPGA EC20 TN1050 samsung K4 ddr dqs detect DDR400 infineon sdr sdram pcb layout guidelines 256MX4
    Text: LatticeECP/EC and LatticeXP DDR Usage Guide February 2007 Technical Note TN1050 Introduction LatticeECP , LatticeEC™ and LatticeXP™ devices support various Double Data Rate DDR and Single Data Rate (SDR) interfaces using the logic built into the Programmable I/O (PIO). SDR applications capture data on one


    Original     		PDF TN1050 200MHz LatticeEC20 sdram pcb layout guide vhdl code for sdr sdram controller memory Controller FPGA EC20 TN1050 samsung K4 ddr dqs detect DDR400 infineon sdr sdram pcb layout guidelines 256MX4

    transistor a015 SMD

    Abstract: IDT DATECODE MARKINGS A016 SMD smd diode marking A03 st smd diode marking code aa8 a012 SMD a013 SMD tqfp-208 fujitsu ten a015 SMD LFEC6E-5T144C
    Text: LatticeECP/EC Family Handbook HB1000 Version 03.1, February 2008 LatticeECP/EC Family Handbook Table of Contents February 2008 Section I. LatticeECP/EC Family Data Sheet Introduction Features . 1-1


    Original     		PDF HB1000 TN1049 TN1052 transistor a015 SMD IDT DATECODE MARKINGS A016 SMD smd diode marking A03 st smd diode marking code aa8 a012 SMD a013 SMD tqfp-208 fujitsu ten a015 SMD LFEC6E-5T144C

    K4H511638B

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit ECC/Non ECC Revision 0.1 August. 2003 Rev. 1.0 August. 2003 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM Revision History Revision 0.0 February, 2003


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64/72-bit K4H511638B

    K4H510838B-TC

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification Revision 0.0 Rev. 0.0 Feb. 2003 DDR SDRAM 512Mb B-die (x4, x8, x16) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review


    Original     		PDF 512Mb K4H510838B-TC

    K4H511638B-TCCC

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x8, x16 preliminary DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 0.0 Rev. 0.0 Mar. 2003 DDR SDRAM 512Mb B-die (x8, x16) preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Rev. 0.0 Mar. 2003


    Original     		PDF 512Mb DDR400 200MHz 400Mbps DDR400 DDR333 K4H511638B-TCCC

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered DIMM Preliminary DDR SDRAM DDR SDRAM Unbuffered Module DDR400 Module 184pin Unbuffered Module based on 512Mb B-die 64/72-bit ECC/Non ECC Revision 0.0 May. 2003 Rev. 0.0 May. 2003 256MB, 512MB, 1GB Unbuffered DIMM Preliminary


    Original     		PDF 256MB, 512MB, DDR400 184pin 512Mb 64/72-bit

    K4H511638B-TCCC

    Abstract: K4H510838B-TCCC K4H510838B-TCC4
    Text: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics


    Original     		PDF 512Mb DDR400 200MHz 400Mbps K4H511638B-TCCC K4H510838B-TCCC K4H510838B-TCC4

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 Pb-Free DDR SDRAM 512Mb B-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) Revision 1.0 February. 2004 Revision 1.0 February. 2004 DDR SDRAM 512Mb B-die (x4, x8, x16) Pb-Free DDR SDRAM 512Mb B-die Revision History


    Original     		PDF 512Mb